Low-Temperature Wafer-Scale Production of ZnO Nanowire Arrays

Homogeneous and dense arrays of ZnO nanowires were synthesized on silicon wafers (and many other substrates) using a mild solution process at 90 °C. Uniform ZnO nanocrystals were deposited to act as seeds for subsequent hydrothermal nanowire growth, which yielded single‐crystalline ZnO nanowires gro...

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Veröffentlicht in:Angewandte Chemie International Edition 2003-07, Vol.42 (26), p.3031-3034
Hauptverfasser: Greene, Lori E., Law, Matt, Goldberger, Joshua, Kim, Franklin, Johnson, Justin C., Zhang, Yanfeng, Saykally, Richard J., Yang, Peidong
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container_issue 26
container_start_page 3031
container_title Angewandte Chemie International Edition
container_volume 42
creator Greene, Lori E.
Law, Matt
Goldberger, Joshua
Kim, Franklin
Johnson, Justin C.
Zhang, Yanfeng
Saykally, Richard J.
Yang, Peidong
description Homogeneous and dense arrays of ZnO nanowires were synthesized on silicon wafers (and many other substrates) using a mild solution process at 90 °C. Uniform ZnO nanocrystals were deposited to act as seeds for subsequent hydrothermal nanowire growth, which yielded single‐crystalline ZnO nanowires grown along the [0001] direction and oriented perpendicular to the wafer surface (see picture; scale bar=1μm). The photoluminescence and lasing behavior of the arrays has been studied as a function of annealing treatment conditions.
doi_str_mv 10.1002/anie.200351461
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subjects electron microscopy
nanowires
oxides
photoluminescence
zinc
title Low-Temperature Wafer-Scale Production of ZnO Nanowire Arrays
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