Phase-Change InSbTe Nanowires Grown in Situ at Low Temperature by Metal−Organic Chemical Vapor Deposition

Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 °C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST...

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Veröffentlicht in:Nano letters 2010-02, Vol.10 (2), p.472-477
Hauptverfasser: Ahn, Jun-Ku, Park, Kyoung-Woo, Jung, Hyun-June, Yoon, Soon-Gil
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Sprache:eng
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