Monolithic silicon bolometers

A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f no...

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Veröffentlicht in:Applied Optics 1984-03, Vol.23 (6), p.910-914
Hauptverfasser: Downey, P. M., Jeffries, A. D., Meyer, S. S., Weiss, R., Bachner, F. J., Donnelly, J. P., Lindley, W. T., Mountain, R. W., Silversmith, D. J.
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container_end_page 914
container_issue 6
container_start_page 910
container_title Applied Optics
container_volume 23
creator Downey, P. M.
Jeffries, A. D.
Meyer, S. S.
Weiss, R.
Bachner, F. J.
Donnelly, J. P.
Lindley, W. T.
Mountain, R. W.
Silversmith, D. J.
description A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.
doi_str_mv 10.1364/AO.23.000910
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source NASA Technical Reports Server; Alma/SFX Local Collection; Optica Publishing Group Journals
subjects Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instrumentation And Photography
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
title Monolithic silicon bolometers
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