Monolithic silicon bolometers
A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f no...
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Veröffentlicht in: | Applied Optics 1984-03, Vol.23 (6), p.910-914 |
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container_title | Applied Optics |
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creator | Downey, P. M. Jeffries, A. D. Meyer, S. S. Weiss, R. Bachner, F. J. Donnelly, J. P. Lindley, W. T. Mountain, R. W. Silversmith, D. J. |
description | A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K. |
doi_str_mv | 10.1364/AO.23.000910 |
format | Article |
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The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.</description><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</subject><subject>Exact sciences and technology</subject><subject>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</subject><subject>Instrumentation And Photography</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Physics</subject><issn>0003-6935</issn><issn>1559-128X</issn><issn>1539-4522</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><sourceid>CYI</sourceid><recordid>eNp90D1PwzAQBmALgWgpbIyAOiBYSPHZZyceq4ovqagLzJbjOCIojcFOB_49RolgYzrp9Og93UvIKdAFcIm3y82C8QWlVAHdI1MQXGUoGNsn07TkmVRcTMhRjO-UAiukOiQTKBhFKemUnD_7zrdN_9bYeWzaxvpuXvrWb13vQjwmB7VpozsZ54y83t-9rB6z9ebhabVcZxap6DNRYVkprDimYFSMGXSgjLSVcLTiuQSUuZNgOBdQ16LMpQDL6jp3vLKF4zNyPeR-BP-5c7HX2yZa17amc34Xdc6RpZ-wSPLqX8mQ5ZALleDNAG3wMQZX64_QbE340kD1T3F6udGM66G4xC_G3F25ddUfHptK4HIEJlrT1sF0tom_TgmZLmNiZwPrTDS660PUoAqkKUQUwL8BVAp66Q</recordid><startdate>19840315</startdate><enddate>19840315</enddate><creator>Downey, P. 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J.</creatorcontrib><creatorcontrib>Donnelly, J. P.</creatorcontrib><creatorcontrib>Lindley, W. T.</creatorcontrib><creatorcontrib>Mountain, R. W.</creatorcontrib><creatorcontrib>Silversmith, D. J.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Applied Optics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Downey, P. M.</au><au>Jeffries, A. D.</au><au>Meyer, S. S.</au><au>Weiss, R.</au><au>Bachner, F. J.</au><au>Donnelly, J. P.</au><au>Lindley, W. T.</au><au>Mountain, R. W.</au><au>Silversmith, D. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolithic silicon bolometers</atitle><jtitle>Applied Optics</jtitle><addtitle>Appl Opt</addtitle><date>1984-03-15</date><risdate>1984</risdate><volume>23</volume><issue>6</issue><spage>910</spage><epage>914</epage><pages>910-914</pages><issn>0003-6935</issn><issn>1559-128X</issn><eissn>1539-4522</eissn><coden>APOPAI</coden><abstract>A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.</abstract><cop>Legacy CDMS</cop><pub>Optical Society of America</pub><pmid>18204660</pmid><doi>10.1364/AO.23.000910</doi><tpages>5</tpages></addata></record> |
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source | NASA Technical Reports Server; Alma/SFX Local Collection; Optica Publishing Group Journals |
subjects | Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instrumentation And Photography Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics |
title | Monolithic silicon bolometers |
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