Low temperature plasma chemical vapor deposition of silicon oxynitride thin-film waveguides

The use of plasma chemical vapor deposition (PCVD) of silicon oxynitride (Si(x)O(y)N(z)) thin films on Si substrates at the very low temperature of 200 C is reported. Such a low deposition temperature would allow these films to be deposited on substrates with low decomposition or melting temperature...

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Veröffentlicht in:	Applied Optics 1984-08, Vol.23 (16), p.2744-2746
1. Verfasser:	LAM, D. K. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optics. Optical fibers and wave guides Optical and optoelectronic circuits
Online-Zugang:	Volltext
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