Low temperature plasma chemical vapor deposition of silicon oxynitride thin-film waveguides
The use of plasma chemical vapor deposition (PCVD) of silicon oxynitride (Si(x)O(y)N(z)) thin films on Si substrates at the very low temperature of 200 C is reported. Such a low deposition temperature would allow these films to be deposited on substrates with low decomposition or melting temperature...
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| Veröffentlicht in: | Applied Optics 1984-08, Vol.23 (16), p.2744-2746 |
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| container_end_page | 2746 |
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| container_issue | 16 |
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| container_title | Applied Optics |
| container_volume | 23 |
| creator | LAM, D. K. W |
| description | The use of plasma chemical vapor deposition (PCVD) of silicon oxynitride (Si(x)O(y)N(z)) thin films on Si substrates at the very low temperature of 200 C is reported. Such a low deposition temperature would allow these films to be deposited on substrates with low decomposition or melting temperature. This is particularly significant to some of the important III-V compounds such as GaAs and InP. Another advantage of this low temperature deposition process is that undesired diffusion of dopants already present in the semiconductor substrates is reduced during film deposition. The details on the deposition procedures and the optical characteristics of the films are reported. |
| doi_str_mv | 10.1364/ao.23.002744 |
| format | Article |
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K. W</creator><creatorcontrib>LAM, D. K. W</creatorcontrib><description>The use of plasma chemical vapor deposition (PCVD) of silicon oxynitride (Si(x)O(y)N(z)) thin films on Si substrates at the very low temperature of 200 C is reported. Such a low deposition temperature would allow these films to be deposited on substrates with low decomposition or melting temperature. This is particularly significant to some of the important III-V compounds such as GaAs and InP. Another advantage of this low temperature deposition process is that undesired diffusion of dopants already present in the semiconductor substrates is reduced during film deposition. The details on the deposition procedures and the optical characteristics of the films are reported.</description><identifier>ISSN: 0003-6935</identifier><identifier>ISSN: 1559-128X</identifier><identifier>EISSN: 1539-4522</identifier><identifier>DOI: 10.1364/ao.23.002744</identifier><identifier>PMID: 18213068</identifier><identifier>CODEN: APOPAI</identifier><language>eng</language><publisher>Washington, DC: Optical Society of America</publisher><subject>Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Integrated optics. 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K. W</creatorcontrib><title>Low temperature plasma chemical vapor deposition of silicon oxynitride thin-film waveguides</title><title>Applied Optics</title><addtitle>Appl Opt</addtitle><description>The use of plasma chemical vapor deposition (PCVD) of silicon oxynitride (Si(x)O(y)N(z)) thin films on Si substrates at the very low temperature of 200 C is reported. Such a low deposition temperature would allow these films to be deposited on substrates with low decomposition or melting temperature. This is particularly significant to some of the important III-V compounds such as GaAs and InP. Another advantage of this low temperature deposition process is that undesired diffusion of dopants already present in the semiconductor substrates is reduced during film deposition. The details on the deposition procedures and the optical characteristics of the films are reported.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated optics. 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Another advantage of this low temperature deposition process is that undesired diffusion of dopants already present in the semiconductor substrates is reduced during film deposition. The details on the deposition procedures and the optical characteristics of the films are reported.</abstract><cop>Washington, DC</cop><pub>Optical Society of America</pub><pmid>18213068</pmid><doi>10.1364/ao.23.002744</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6935 |
| ispartof | Applied Optics, 1984-08, Vol.23 (16), p.2744-2746 |
| issn | 0003-6935 1559-128X 1539-4522 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_734244816 |
| source | Alma/SFX Local Collection; Optica Publishing Group Journals |
| subjects | Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optics. Optical fibers and wave guides Optical and optoelectronic circuits |
| title | Low temperature plasma chemical vapor deposition of silicon oxynitride thin-film waveguides |
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