Method of measuring the spatial resolution of a photoresist
By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography al...
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| Veröffentlicht in: | Optics letters 2002-10, Vol.27 (20), p.1776-1778 |
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| container_issue | 20 |
| container_start_page | 1776 |
| container_title | Optics letters |
| container_volume | 27 |
| creator | Hoffnagle, J A Hinsberg, W D Sanchez, M I Houle, F A |
| description | By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination. |
| doi_str_mv | 10.1364/ol.27.001776 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0146-9592 |
| ispartof | Optics letters, 2002-10, Vol.27 (20), p.1776-1778 |
| issn | 0146-9592 1539-4794 |
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| source | Optica Publishing Group Journals |
| title | Method of measuring the spatial resolution of a photoresist |
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