Investigation of a half-wave method for birefringence or thickness measurements of a thick, semitransparent, uniaxial, anisotropic substrate by use of spectroscopic ellipsometry
A half-wave method of measurement of wafer birefringence that is based on interference fringes recorded from a uniaxial wafer by use of a standard phase-modulated spectroscopic ellipsometer is investigated. The birefringence of uniaxial wafers is calculated from the extremal points in the recorded o...
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Veröffentlicht in: | Applied Optics 2000-09, Vol.39 (25), p.4649-4657 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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