Transfer-Free Batch Fabrication of Single Layer Graphene Transistors
Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology. We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrica...
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| Veröffentlicht in: | Nano letters 2009-12, Vol.9 (12), p.4479-4483 |
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| container_issue | 12 |
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| container_title | Nano letters |
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| creator | Levendorf, Mark P Ruiz-Vargas, Carlos S Garg, Shivank Park, Jiwoong |
| description | Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology. We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, ( Ferrari A. C. et al. Phys. Rev. Lett. 2006, 97, 187401. ) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm2/V·s and current saturation characteristics similar to devices based on exfoliated graphene ( Meric I. et al. Nat Nanotechnol. 2008, 3, 654−659 ). |
| doi_str_mv | 10.1021/nl902790r |
| format | Article |
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We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, ( Ferrari A. C. et al. Phys. Rev. Lett. 2006, 97, 187401. ) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm2/V·s and current saturation characteristics similar to devices based on exfoliated graphene ( Meric I. et al. 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We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, ( Ferrari A. C. et al. Phys. Rev. Lett. 2006, 97, 187401. ) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm2/V·s and current saturation characteristics similar to devices based on exfoliated graphene ( Meric I. et al. Nat Nanotechnol. 2008, 3, 654−659 ).</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electric Impedance</subject><subject>Electron Transport</subject><subject>Electronics</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Graphite - chemistry</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Mechanical properties of nanoscale materials</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanotechnology - instrumentation</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Specific materials</subject><subject>Transistors, Electronic</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpt0D1PwzAQBmALgWgpDPwBlAUhhsDZzpdHWmhBqsRAmaOrc6ap0qTYydB_j6FRuzD5hufek1_Grjk8cBD8sa4UiFSBPWFDHksIE6XE6WHOogG7cG4NAErGcM4GXGUJRJAM2fPCYu0M2XBqiYIxtnoVTHFpS41t2dRBY4KPsv6qKJjjjmwws7hdUU3B32Lp2sa6S3ZmsHJ01b8j9jl9WUxew_n77G3yNA8x4tCGhKS1QVNgApkyMtFFGheSpwllWkqIZRZzrmCpkJB7I7Txc2FEoaWOUY7Y3T53a5vvjlybb0qnqaqwpqZzeSojH8bj1Mv7vdS2cc6Sybe23KDd5Rzy387yQ2fe3vSp3XJDxVH2JXlw2wN0GivjP65Ld3BCCEijRB4dapevm87Wvox_Dv4Aee1_3Q</recordid><startdate>20091209</startdate><enddate>20091209</enddate><creator>Levendorf, Mark P</creator><creator>Ruiz-Vargas, Carlos S</creator><creator>Garg, Shivank</creator><creator>Park, Jiwoong</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20091209</creationdate><title>Transfer-Free Batch Fabrication of Single Layer Graphene Transistors</title><author>Levendorf, Mark P ; Ruiz-Vargas, Carlos S ; Garg, Shivank ; Park, Jiwoong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a410t-eaeccfafda6089f36cd75d3176e8c33053851190b9aea16082cfb9adf2dc3c5a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electric Impedance</topic><topic>Electron Transport</topic><topic>Electronics</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Graphite - chemistry</topic><topic>Materials science</topic><topic>Mechanical and acoustical properties of condensed matter</topic><topic>Mechanical properties of nanoscale materials</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Nanotechnology - instrumentation</topic><topic>Physics</topic><topic>Semiconductor electronics. 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| subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electric Impedance Electron Transport Electronics Equipment Design Equipment Failure Analysis Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphite - chemistry Materials science Mechanical and acoustical properties of condensed matter Mechanical properties of nanoscale materials Molecular electronics, nanoelectronics Nanotechnology - instrumentation Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Transistors, Electronic |
| title | Transfer-Free Batch Fabrication of Single Layer Graphene Transistors |
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