Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid

Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process that is now well understood and accepted. This surface has become a standard for studies of surface science and an important component in silicon device processing for microelectronics, energy, and sensor a...

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Veröffentlicht in:	Journal of the American Chemical Society 2009-11, Vol.131 (46), p.16808-16813
Hauptverfasser:	Dhar, Sarit, Seitz, Oliver, Halls, Mathew D, Choi, Sungho, Chabal, Yves J, Feldman, Leonard C
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Compounds, Inorganic - chemistry Hydrofluoric Acid - chemistry Oxidation-Reduction Photoelectron Spectroscopy Silicon Compounds - chemistry Surface Properties
Online-Zugang:	Volltext
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