Integrated ultrafast saturable absorber

An ultrafast saturable absorber was demonstrated experimentally in AlGaAs, operated with a photon energy below half the band gap, near 1555 nm. Both the saturation intensity and the linear transmission can be independently designed in the structure. The device is based on spatial soliton emission fr...

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Veröffentlicht in:Optics letters 1994-05, Vol.19 (10), p.761-763
Hauptverfasser: Villeneuve, A, Aitchison, J S, Kang, J U, Wigley, P G, Stegeman, G I
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container_end_page 763
container_issue 10
container_start_page 761
container_title Optics letters
container_volume 19
creator Villeneuve, A
Aitchison, J S
Kang, J U
Wigley, P G
Stegeman, G I
description An ultrafast saturable absorber was demonstrated experimentally in AlGaAs, operated with a photon energy below half the band gap, near 1555 nm. Both the saturation intensity and the linear transmission can be independently designed in the structure. The device is based on spatial soliton emission from a tapered channel waveguide with a corresponding increase in transmission of 50%. The experimental data compare favorably with numerically simulated results.
doi_str_mv 10.1364/OL.19.000761
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title Integrated ultrafast saturable absorber
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