Near-infrared four-wave mixing with gain and self-starting oscillators with photorefractive GaAs

We report high-reflectivity four-wave mixing in photorefractive GaAs:Cr crystals at 1.06 microm using a nearly degenerate interaction with an externally applied dc electric field (moving-grating recording mode). The highest reflectivities (R approximately 5) are observed for the positive-readout con...

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Veröffentlicht in:Optics letters 1989, Vol.14 (1), p.78-80
Hauptverfasser: RAJBENBACH, H, IMBERT, B, HUIGNARD, J. P, MALLICK, S
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Sprache:eng
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