Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides

We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of t...

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Veröffentlicht in:	Optics express 2010-02, Vol.18 (4), p.3582-3591
Hauptverfasser:	Turner-Foster, Amy C, Foster, Mark A, Levy, Jacob S, Poitras, Carl B, Salem, Reza, Gaeta, Alexander L, Lipson, Michal
Format:	Artikel
Sprache:	eng
Schlagworte:	Electromagnetic Fields Electron Transport Equipment Design Equipment Failure Analysis Light Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - instrumentation Scattering, Radiation Semiconductors Silicon - chemistry
Online-Zugang:	Volltext
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