Nanoscale residual stress-field mappingaround nanoindents in SiCby IR s-SNOM and confocal Raman microscopy

We map a nanoindent in a silicon carbide (SiC) crystal by infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) and confocal Raman microscopy and interpret the resulting images in terms of local residual stress-fields. By comparing near-field IR and confocal Raman images, we...

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Veröffentlicht in:	Optics express 2009-12, Vol.17 (25), p.22351-22357
Hauptverfasser:	Gigler, Alexander M, Huber, Andreas J, Bauer, Michael, Ziegler, Alexander, Hillenbrand, Rainer, Stark, Robert W
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Compounds, Inorganic - chemistry Elastic Modulus Hardness Hardness Tests - methods Materials Testing - methods Microscopy, Atomic Force - methods Microscopy, Confocal - methods Silicon Compounds - chemistry Spectrum Analysis, Raman - methods Surface Properties
Online-Zugang:	Volltext
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