Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics
In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) expe...
Gespeichert in:
| Veröffentlicht in: | Nanotechnology 2010-02, Vol.21 (6), p.065202-065202 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 065202 |
|---|---|
| container_issue | 6 |
| container_start_page | 065202 |
| container_title | Nanotechnology |
| container_volume | 21 |
| creator | Khankhoje, U K Kim, S-H Richards, B C Hendrickson, J Sweet, J Olitzky, J D Khitrova, G Gibbs, H M Scherer, A |
| description | In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance. |
| doi_str_mv | 10.1088/0957-4484/21/6/065202 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_733709679</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671280406</sourcerecordid><originalsourceid>FETCH-LOGICAL-c419t-af46207262a30129e91277459974840b6e3670e2443a88dd6aef77d57acfae7a3</originalsourceid><addsrcrecordid>eNqNkctO5DAQRS3ECJrHJ4C8YxZkuuw4drJEiGmQGM1m2GJVOzYYJXGwE6T--0krwAaEWJWudG49bhFywuAXg7JcQlWoTIhSLDlbyiXIggPfIQuWS5ZNotwli3dmnxyk9ATAWMnZHtnnAIUCAQty_yfUtml890Cxq6nDdfQGBx86Ghxd4UWi_WMYQudNZuImDdhQgy9-8DZRF-IsNvR5xG4YW2oba4YY6k2HrTfpiPxw2CR7_FoPyd3vq3-X19nt39XN5cVtZgSrhgydkBwUlxxzYLyyFeNKiaKq1LQ9rKXNpQLLhcixLOtaonVK1YVC49AqzA_J2dy3j-F5tGnQrU9mOgw7G8akVZ4rqKSqJvLnlySTivFyykZOaDGjJoaUonW6j77FuNEM9PYJehuw3gasOdNSz0-YfKevI8Z1a-t311vqEwAz4EP_7Z7nHy2forqvXf4fPeidyg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671280406</pqid></control><display><type>article</type><title>Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Khankhoje, U K ; Kim, S-H ; Richards, B C ; Hendrickson, J ; Sweet, J ; Olitzky, J D ; Khitrova, G ; Gibbs, H M ; Scherer, A</creator><creatorcontrib>Khankhoje, U K ; Kim, S-H ; Richards, B C ; Hendrickson, J ; Sweet, J ; Olitzky, J D ; Khitrova, G ; Gibbs, H M ; Scherer, A</creatorcontrib><description>In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/0957-4484/21/6/065202</identifier><identifier>PMID: 20057040</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>Devices ; Gallium arsenide ; Gallium arsenides ; Holes ; Indium arsenides ; Modelling ; Quantum electrodynamics ; Two dimensional</subject><ispartof>Nanotechnology, 2010-02, Vol.21 (6), p.065202-065202</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-af46207262a30129e91277459974840b6e3670e2443a88dd6aef77d57acfae7a3</citedby><cites>FETCH-LOGICAL-c419t-af46207262a30129e91277459974840b6e3670e2443a88dd6aef77d57acfae7a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0957-4484/21/6/065202/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27923,27924,53829,53909</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/20057040$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Khankhoje, U K</creatorcontrib><creatorcontrib>Kim, S-H</creatorcontrib><creatorcontrib>Richards, B C</creatorcontrib><creatorcontrib>Hendrickson, J</creatorcontrib><creatorcontrib>Sweet, J</creatorcontrib><creatorcontrib>Olitzky, J D</creatorcontrib><creatorcontrib>Khitrova, G</creatorcontrib><creatorcontrib>Gibbs, H M</creatorcontrib><creatorcontrib>Scherer, A</creatorcontrib><title>Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics</title><title>Nanotechnology</title><addtitle>Nanotechnology</addtitle><description>In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.</description><subject>Devices</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Holes</subject><subject>Indium arsenides</subject><subject>Modelling</subject><subject>Quantum electrodynamics</subject><subject>Two dimensional</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNkctO5DAQRS3ECJrHJ4C8YxZkuuw4drJEiGmQGM1m2GJVOzYYJXGwE6T--0krwAaEWJWudG49bhFywuAXg7JcQlWoTIhSLDlbyiXIggPfIQuWS5ZNotwli3dmnxyk9ATAWMnZHtnnAIUCAQty_yfUtml890Cxq6nDdfQGBx86Ghxd4UWi_WMYQudNZuImDdhQgy9-8DZRF-IsNvR5xG4YW2oba4YY6k2HrTfpiPxw2CR7_FoPyd3vq3-X19nt39XN5cVtZgSrhgydkBwUlxxzYLyyFeNKiaKq1LQ9rKXNpQLLhcixLOtaonVK1YVC49AqzA_J2dy3j-F5tGnQrU9mOgw7G8akVZ4rqKSqJvLnlySTivFyykZOaDGjJoaUonW6j77FuNEM9PYJehuw3gasOdNSz0-YfKevI8Z1a-t311vqEwAz4EP_7Z7nHy2forqvXf4fPeidyg</recordid><startdate>20100210</startdate><enddate>20100210</enddate><creator>Khankhoje, U K</creator><creator>Kim, S-H</creator><creator>Richards, B C</creator><creator>Hendrickson, J</creator><creator>Sweet, J</creator><creator>Olitzky, J D</creator><creator>Khitrova, G</creator><creator>Gibbs, H M</creator><creator>Scherer, A</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20100210</creationdate><title>Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics</title><author>Khankhoje, U K ; Kim, S-H ; Richards, B C ; Hendrickson, J ; Sweet, J ; Olitzky, J D ; Khitrova, G ; Gibbs, H M ; Scherer, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-af46207262a30129e91277459974840b6e3670e2443a88dd6aef77d57acfae7a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Devices</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Holes</topic><topic>Indium arsenides</topic><topic>Modelling</topic><topic>Quantum electrodynamics</topic><topic>Two dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khankhoje, U K</creatorcontrib><creatorcontrib>Kim, S-H</creatorcontrib><creatorcontrib>Richards, B C</creatorcontrib><creatorcontrib>Hendrickson, J</creatorcontrib><creatorcontrib>Sweet, J</creatorcontrib><creatorcontrib>Olitzky, J D</creatorcontrib><creatorcontrib>Khitrova, G</creatorcontrib><creatorcontrib>Gibbs, H M</creatorcontrib><creatorcontrib>Scherer, A</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khankhoje, U K</au><au>Kim, S-H</au><au>Richards, B C</au><au>Hendrickson, J</au><au>Sweet, J</au><au>Olitzky, J D</au><au>Khitrova, G</au><au>Gibbs, H M</au><au>Scherer, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics</atitle><jtitle>Nanotechnology</jtitle><addtitle>Nanotechnology</addtitle><date>2010-02-10</date><risdate>2010</risdate><volume>21</volume><issue>6</issue><spage>065202</spage><epage>065202</epage><pages>065202-065202</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><abstract>In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>20057040</pmid><doi>10.1088/0957-4484/21/6/065202</doi><tpages>1</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4484 |
| ispartof | Nanotechnology, 2010-02, Vol.21 (6), p.065202-065202 |
| issn | 0957-4484 1361-6528 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_733709679 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Devices Gallium arsenide Gallium arsenides Holes Indium arsenides Modelling Quantum electrodynamics Two dimensional |
| title | Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T10%3A40%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modelling%20and%20fabrication%20of%20GaAs%20photonic-crystal%20cavities%20for%20cavity%20quantum%20electrodynamics&rft.jtitle=Nanotechnology&rft.au=Khankhoje,%20U%20K&rft.date=2010-02-10&rft.volume=21&rft.issue=6&rft.spage=065202&rft.epage=065202&rft.pages=065202-065202&rft.issn=0957-4484&rft.eissn=1361-6528&rft_id=info:doi/10.1088/0957-4484/21/6/065202&rft_dat=%3Cproquest_cross%3E1671280406%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671280406&rft_id=info:pmid/20057040&rfr_iscdi=true |