Synthesis of Bandgap-Controlled Semiconducting Single-Walled Carbon Nanotubes

Bandgap-controlled semiconducting single-walled carbon nanotubes (s-SWNTs) were synthesized using a uniquely designed catalytic layer (Al2O3/Fe/Al2O3) and conventional thermal chemical vapor deposition. Homogeneously sized Fe catalytic nanoparticles were prepared on the Al2O3 layer and their sizes w...

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Veröffentlicht in:ACS nano 2010-02, Vol.4 (2), p.1012-1018
Hauptverfasser: Song, Wooseok, Jeon, Cheolho, Kim, Yoo Seok, Kwon, Young Taek, Jung, Dae Sung, Jang, Sung Won, Choi, Won Chel, Park, Jin Sung, Saito, Riichiro, Park, Chong-Yun
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container_issue 2
container_start_page 1012
container_title ACS nano
container_volume 4
creator Song, Wooseok
Jeon, Cheolho
Kim, Yoo Seok
Kwon, Young Taek
Jung, Dae Sung
Jang, Sung Won
Choi, Won Chel
Park, Jin Sung
Saito, Riichiro
Park, Chong-Yun
description Bandgap-controlled semiconducting single-walled carbon nanotubes (s-SWNTs) were synthesized using a uniquely designed catalytic layer (Al2O3/Fe/Al2O3) and conventional thermal chemical vapor deposition. Homogeneously sized Fe catalytic nanoparticles were prepared on the Al2O3 layer and their sizes were controlled by simply modulating the annealing time via heat-driven diffusion and subsequent evaporation of Fe at 800 °C. Transmission electron microscopy and Raman spectroscopy revealed that the synthesized SWNTs diameter was manipulated from 1.4 to 0.8 nm with an extremely narrow diameter distribution below 0.1 nm as the annealing time is increased. As a result, the bandgap of semiconducting SWNTs was successfully controlled, ranging from 0.53 to 0.83 eV, with a sufficiently narrow energy distribution, which can be applied to field-effect transistors based on SWNTs.
doi_str_mv 10.1021/nn901135b
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title Synthesis of Bandgap-Controlled Semiconducting Single-Walled Carbon Nanotubes
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