Shaping Ge islands on Si(001) surfaces with misorientation angle

Shaping Ge islands on Si(001) surfaces with misorientation angle

A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 degrees -8 degrees is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microsco...

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Veröffentlicht in:Physical review letters 2010-01, Vol.104 (3), p.036104-036104, Article 036104
Hauptverfasser: Persichetti, L, Sgarlata, A, Fanfoni, M, Balzarotti, A
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creator Persichetti, L
Sgarlata, A
Fanfoni, M
Balzarotti, A
description A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 degrees -8 degrees is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the {105} faceting at atomic scale.
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title Shaping Ge islands on Si(001) surfaces with misorientation angle
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