Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition

Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition

The authors report their latest results on II-VI intersubband all-optical switches in which the 10 dB absorption saturation energy is lowered to ~2.0-2.2 pJ for 1.55-1.58 mum by decreasing the thickness of the active layer and increasing the refractive index difference between the core layer and the...

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Veröffentlicht in:Optics express 2007-09, Vol.15 (19), p.12123-12130
Hauptverfasser: Cong, G W, Akimoto, R, Akita, K, Hasama, T, Ishikawa, H
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container_issue 19
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container_title Optics express
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creator Cong, G W
Akimoto, R
Akita, K
Hasama, T
Ishikawa, H
description The authors report their latest results on II-VI intersubband all-optical switches in which the 10 dB absorption saturation energy is lowered to ~2.0-2.2 pJ for 1.55-1.58 mum by decreasing the thickness of the active layer and increasing the refractive index difference between the core layer and the cladding layers in waveguides. Such low saturation energies greatly improve the switching performance.
doi_str_mv 10.1364/OE.15.012123
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Such low saturation energies greatly improve the switching performance. &lt;7 pJ pump energy at 1520 nm is sufficient for realizing 10 dB switching operation at 1566 nm (switching energy: ~0.7 pJ/dB). 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title Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition
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