Use of optical scattering to characterize dislocations in semiconductors

Optical scattering from a defect-etched semiconductor sample is used to characterize dislocations in the material. It is shown that when the sample is illuminated normally with a He-Ne (lambda = 6328-A) laser beam the reflection pattern can be used to identify the shapes of the etch pits and hence t...

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Veröffentlicht in:	Applied Optics 1988-11, Vol.27 (22), p.4676-4683
1. Verfasser:	SOPORI, B. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Physics Structure of solids and liquids crystallography
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