Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
We report a diameter-dependent photoconduction gain in intrinsic Ge nanowire (NW) photodetectors. By employing a scanning photocurrent imaging technique, we provide evidence that the photocarrier transport is governed by the hole drift along the Ge NWs, ensuing the higher internal gain up to ∼103 fr...
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| Veröffentlicht in: | Nano letters 2010-06, Vol.10 (6), p.2043-2048 |
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| container_title | Nano letters |
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| creator | Kim, Cheol-Joo Lee, Hyun-Seung Cho, Yong-Jun Kang, Kibum Jo, Moon-Ho |
| description | We report a diameter-dependent photoconduction gain in intrinsic Ge nanowire (NW) photodetectors. By employing a scanning photocurrent imaging technique, we provide evidence that the photocarrier transport is governed by the hole drift along the Ge NWs, ensuing the higher internal gain up to ∼103 from the thin NWs. It is found that the magnitudes of both gain and photoconductivity are inversely proportional to the NW diameter ranging from 50 to 300 nm. We attribute our observations to the variation in the effective hole carrier density upon varying diameters of Ge NWs, as a result of field effects from the diameter-dependent population of the surface-trapped electrons, along with a model calculation. Our observations represent inherent size effects of internal gain in semiconductor NWs, thereby provide a new insight into nano-optoelectronics. |
| doi_str_mv | 10.1021/nl100136b |
| format | Article |
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By employing a scanning photocurrent imaging technique, we provide evidence that the photocarrier transport is governed by the hole drift along the Ge NWs, ensuing the higher internal gain up to ∼103 from the thin NWs. It is found that the magnitudes of both gain and photoconductivity are inversely proportional to the NW diameter ranging from 50 to 300 nm. We attribute our observations to the variation in the effective hole carrier density upon varying diameters of Ge NWs, as a result of field effects from the diameter-dependent population of the surface-trapped electrons, along with a model calculation. Our observations represent inherent size effects of internal gain in semiconductor NWs, thereby provide a new insight into nano-optoelectronics.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl100136b</identifier><identifier>PMID: 20420371</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Materials science ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Optoelectronic devices ; Physics ; Quantum wires ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Nano letters, 2010-06, Vol.10 (6), p.2043-2048</ispartof><rights>Copyright © 2010 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a344t-3eac4662c816b77c616ca33cafd946c63c0910973b3c549a7d8023539049f58e3</citedby><cites>FETCH-LOGICAL-a344t-3eac4662c816b77c616ca33cafd946c63c0910973b3c549a7d8023539049f58e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl100136b$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl100136b$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,777,781,2752,27057,27905,27906,56719,56769</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22908257$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/20420371$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Cheol-Joo</creatorcontrib><creatorcontrib>Lee, Hyun-Seung</creatorcontrib><creatorcontrib>Cho, Yong-Jun</creatorcontrib><creatorcontrib>Kang, Kibum</creatorcontrib><creatorcontrib>Jo, Moon-Ho</creatorcontrib><title>Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We report a diameter-dependent photoconduction gain in intrinsic Ge nanowire (NW) photodetectors. By employing a scanning photocurrent imaging technique, we provide evidence that the photocarrier transport is governed by the hole drift along the Ge NWs, ensuing the higher internal gain up to ∼103 from the thin NWs. It is found that the magnitudes of both gain and photoconductivity are inversely proportional to the NW diameter ranging from 50 to 300 nm. We attribute our observations to the variation in the effective hole carrier density upon varying diameters of Ge NWs, as a result of field effects from the diameter-dependent population of the surface-trapped electrons, along with a model calculation. Our observations represent inherent size effects of internal gain in semiconductor NWs, thereby provide a new insight into nano-optoelectronics.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Cheol-Joo</creatorcontrib><creatorcontrib>Lee, Hyun-Seung</creatorcontrib><creatorcontrib>Cho, Yong-Jun</creatorcontrib><creatorcontrib>Kang, Kibum</creatorcontrib><creatorcontrib>Jo, Moon-Ho</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Cheol-Joo</au><au>Lee, Hyun-Seung</au><au>Cho, Yong-Jun</au><au>Kang, Kibum</au><au>Jo, Moon-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2010-06-09</date><risdate>2010</risdate><volume>10</volume><issue>6</issue><spage>2043</spage><epage>2048</epage><pages>2043-2048</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We report a diameter-dependent photoconduction gain in intrinsic Ge nanowire (NW) photodetectors. By employing a scanning photocurrent imaging technique, we provide evidence that the photocarrier transport is governed by the hole drift along the Ge NWs, ensuing the higher internal gain up to ∼103 from the thin NWs. It is found that the magnitudes of both gain and photoconductivity are inversely proportional to the NW diameter ranging from 50 to 300 nm. We attribute our observations to the variation in the effective hole carrier density upon varying diameters of Ge NWs, as a result of field effects from the diameter-dependent population of the surface-trapped electrons, along with a model calculation. Our observations represent inherent size effects of internal gain in semiconductor NWs, thereby provide a new insight into nano-optoelectronics.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>20420371</pmid><doi>10.1021/nl100136b</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Optoelectronic devices Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors |
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