Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction

A new approach for the fabrication of n-type porous silicon layer is proposed. A hole-rich p-layer is arranged underneath the n-layer, and the np-junction is under forward biased condition in the etching process. Therefore sufficient holes can drift straight-upward and pass across the np-junction fr...

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Veröffentlicht in:	Optics express 2006-10, Vol.14 (21), p.9764-9769
Hauptverfasser:	Lin, Jia-Chuan, Chen, Wei-Lun, Tsai, Wei-Chih
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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