Implication of rapid thermal annealing-induced cracks on the performance of multiple-quantum-well laser diodes

We investigated the effects of rapid thermal annealing (RTA)-induced cracks on the diode performance fabricated with GaAs-AlGaAs microstructures. These effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The resul...

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Veröffentlicht in:	Applied Optics 2003-05, Vol.42 (15), p.2695-2701
Hauptverfasser:	Yee, Hoshin H, Yu, Chih-Ping
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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