Diffusion thermopower of a two-dimensional hole gas in SiGe in a quantum Hall insulating state

Diffusion thermopower of a two-dimensional hole gas in SiGe in a quantum Hall insulating state

Both the temperature dependence of resistivity and thermopower of a two-dimensional hole gas in SiGe show a reentrant metal-insulator transition at filling factor nu=1.5, but with strikingly different behavior of the two coefficients. As the temperature is decreased in the insulating state, the resi...

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Veröffentlicht in:Physical review letters 2003-05, Vol.90 (17), p.176601-176601, Article 176601
Hauptverfasser: Possanzini, C, Fletcher, R, Coleridge, P T, Feng, Y, Williams, R L, Maan, J C
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container_issue 17
container_start_page 176601
container_title Physical review letters
container_volume 90
creator Possanzini, C
Fletcher, R
Coleridge, P T
Feng, Y
Williams, R L
Maan, J C
description Both the temperature dependence of resistivity and thermopower of a two-dimensional hole gas in SiGe show a reentrant metal-insulator transition at filling factor nu=1.5, but with strikingly different behavior of the two coefficients. As the temperature is decreased in the insulating state, the resistivity diverges exponentially while the thermopower decreases rapidly, suggesting that the insulating state is due to the presence of a mobility edge rather than a gap at the Fermi energy.
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title Diffusion thermopower of a two-dimensional hole gas in SiGe in a quantum Hall insulating state
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