Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements

Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements

We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at rema...

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Veröffentlicht in:Physical review letters 2003-03, Vol.90 (9), p.097202-097202, Article 097202
Hauptverfasser: Kläui, M, Vaz, C A F, Rothman, J, Bland, J A C, Wernsdorfer, W, Faini, G, Cambril, E
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container_issue 9
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container_title Physical review letters
container_volume 90
creator Kläui, M
Vaz, C A F
Rothman, J
Bland, J A C
Wernsdorfer, W
Faini, G
Cambril, E
description We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at remanence is found to occur when a single transverse domain wall is pinned at the notch, in agreement with the results of numerical simulations of the anisotropic magnetoresistance. When a field is applied in the direction corresponding to a potential well edge, a novel magnetic state with a very wide domain wall is stabilized, giving rise to a characteristic signature in the magnetoresistance at such angles.
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title Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements
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