Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements
We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at rema...
Gespeichert in:
Veröffentlicht in: | Physical review letters 2003-03, Vol.90 (9), p.097202-097202, Article 097202 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at remanence is found to occur when a single transverse domain wall is pinned at the notch, in agreement with the results of numerical simulations of the anisotropic magnetoresistance. When a field is applied in the direction corresponding to a potential well edge, a novel magnetic state with a very wide domain wall is stabilized, giving rise to a characteristic signature in the magnetoresistance at such angles. |
---|---|
ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/physrevlett.90.097202 |