Adatom kinetics on and below the surface: the existence of a new diffusion channel

Adatom kinetics on and below the surface: the existence of a new diffusion channel

Employing density-functional theory in combination with scanning tunneling microscopy, we demonstrate that a thin metallic film on a semiconductor surface may open an efficient and hitherto not expected diffusion channel for lateral adatom transport: adatoms may prefer diffusion within this metallic...

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Veröffentlicht in:Physical review letters 2003-02, Vol.90 (5), p.056101-056101, Article 056101
Hauptverfasser: Neugebauer, Jörg, Zywietz, Tosja K, Scheffler, Matthias, Northrup, John E, Chen, Huajie, Feenstra, R M
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container_issue 5
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container_title Physical review letters
container_volume 90
creator Neugebauer, Jörg
Zywietz, Tosja K
Scheffler, Matthias
Northrup, John E
Chen, Huajie
Feenstra, R M
description Employing density-functional theory in combination with scanning tunneling microscopy, we demonstrate that a thin metallic film on a semiconductor surface may open an efficient and hitherto not expected diffusion channel for lateral adatom transport: adatoms may prefer diffusion within this metallic layer rather than on top of the surface. Based on this concept, we interpret recent experiments: We explain why and when In acts as a surfactant on GaN surfaces, why Ga acts as an autosurfactant, and how this mechanism can be used to optimize group-III nitride growth.
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title Adatom kinetics on and below the surface: the existence of a new diffusion channel
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