Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

We formulate a theory of doped magnetic semiconductors such as Ga(1-x)Mn(x)As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T(c) as a function of magne...

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Veröffentlicht in:Physical review letters 2001-11, Vol.87 (22), p.227202-227202, Article 227202
Hauptverfasser: Chattopadhyay, A, Das Sarma, S, Millis, A J
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container_title Physical review letters
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creator Chattopadhyay, A
Das Sarma, S
Millis, A J
description We formulate a theory of doped magnetic semiconductors such as Ga(1-x)Mn(x)As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T(c) as a function of magnetic coupling strength J, carrier density n, and Mn density x. We find that T(c) is determined by a subtle interplay between carrier density and magnetic coupling.
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title Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
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