Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in r...
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Veröffentlicht in: | Optics express 2008-05, Vol.16 (11), p.7641-7648 |
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creator | Chen, Hou-Tong Lu, Hong Azad, Abul K Averitt, Richard D Gossard, Arthur C Trugman, Stuart A O'Hara, John F Taylor, Antoinette J |
description | We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges. |
doi_str_mv | 10.1364/oe.16.007641 |
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The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. 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The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.</description><subject>Computer Simulation</subject><subject>Computer-Aided Design</subject><subject>Electronics - instrumentation</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Light</subject><subject>Microwaves</subject><subject>Models, Theoretical</subject><subject>Scattering, Radiation</subject><subject>Semiconductors</subject><subject>Surface Plasmon Resonance - instrumentation</subject><subject>Telecommunications - instrumentation</subject><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpNkL1PwzAUxC0EoqWwMSNPTKTYiR07I0LlQ6rUBWbLsZ-boDQutgOUv56gVoLpnZ5-Ot0dQpeUzGlRslsPc1rOCRElo0doSknFMkakOP6nJ-gsxjdCKBOVOEUTKjnjTNApqhcdmBR83xpsfD-qDnuH4SsF7YNtex12OEHQDYT0jcdvHzdtjK3vcWqCH9YNjkP9qT-gg36dGryBpDvc-A6wDkHv4jk6cbqLcHG4M_T6sHi5f8qWq8fn-7tlZlhRpkxywTi3FiQBm1emAOmYBCokJY5zB7UkriC1EDnLzRjfFZzmVkNVCVuBLWboeu-7Df59gJjUGNRA1-ke_BCVoGXJ86oYwZs9aIKPMYBT29BuxqKKEvW7qVotFC3VftMRvzr4DvUG7B98GLH4AUoidFM</recordid><startdate>20080526</startdate><enddate>20080526</enddate><creator>Chen, Hou-Tong</creator><creator>Lu, Hong</creator><creator>Azad, Abul K</creator><creator>Averitt, Richard D</creator><creator>Gossard, Arthur C</creator><creator>Trugman, Stuart A</creator><creator>O'Hara, John F</creator><creator>Taylor, Antoinette J</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20080526</creationdate><title>Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays</title><author>Chen, Hou-Tong ; Lu, Hong ; Azad, Abul K ; Averitt, Richard D ; Gossard, Arthur C ; Trugman, Stuart A ; O'Hara, John F ; Taylor, Antoinette J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-857455dde80ed29c3e8f48e17810f55feb80f30b77242c454f3512dae997d9ed3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Computer Simulation</topic><topic>Computer-Aided Design</topic><topic>Electronics - instrumentation</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Light</topic><topic>Microwaves</topic><topic>Models, Theoretical</topic><topic>Scattering, Radiation</topic><topic>Semiconductors</topic><topic>Surface Plasmon Resonance - instrumentation</topic><topic>Telecommunications - instrumentation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Hou-Tong</creatorcontrib><creatorcontrib>Lu, Hong</creatorcontrib><creatorcontrib>Azad, Abul K</creatorcontrib><creatorcontrib>Averitt, Richard D</creatorcontrib><creatorcontrib>Gossard, Arthur C</creatorcontrib><creatorcontrib>Trugman, Stuart A</creatorcontrib><creatorcontrib>O'Hara, John F</creatorcontrib><creatorcontrib>Taylor, Antoinette J</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Hou-Tong</au><au>Lu, Hong</au><au>Azad, Abul K</au><au>Averitt, Richard D</au><au>Gossard, Arthur C</au><au>Trugman, Stuart A</au><au>O'Hara, John F</au><au>Taylor, Antoinette J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2008-05-26</date><risdate>2008</risdate><volume>16</volume><issue>11</issue><spage>7641</spage><epage>7648</epage><pages>7641-7648</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.</abstract><cop>United States</cop><pmid>18545471</pmid><doi>10.1364/oe.16.007641</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Computer Simulation Computer-Aided Design Electronics - instrumentation Equipment Design Equipment Failure Analysis Light Microwaves Models, Theoretical Scattering, Radiation Semiconductors Surface Plasmon Resonance - instrumentation Telecommunications - instrumentation |
title | Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays |
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