Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays

We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in r...

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Veröffentlicht in:Optics express 2008-05, Vol.16 (11), p.7641-7648
Hauptverfasser: Chen, Hou-Tong, Lu, Hong, Azad, Abul K, Averitt, Richard D, Gossard, Arthur C, Trugman, Stuart A, O'Hara, John F, Taylor, Antoinette J
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container_end_page 7648
container_issue 11
container_start_page 7641
container_title Optics express
container_volume 16
creator Chen, Hou-Tong
Lu, Hong
Azad, Abul K
Averitt, Richard D
Gossard, Arthur C
Trugman, Stuart A
O'Hara, John F
Taylor, Antoinette J
description We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.
doi_str_mv 10.1364/oe.16.007641
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subjects Computer Simulation
Computer-Aided Design
Electronics - instrumentation
Equipment Design
Equipment Failure Analysis
Light
Microwaves
Models, Theoretical
Scattering, Radiation
Semiconductors
Surface Plasmon Resonance - instrumentation
Telecommunications - instrumentation
title Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays
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