Electronically driven structure changes of Si captured by femtosecond electron diffraction
The excitation of a high density of carriers in semiconductors can induce an order-to-disorder phase transition due to changes in the potential-energy landscape of the lattice. We report the first direct resolution of the structural details of this phenomenon in freestanding films of polycrystalline...
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| Veröffentlicht in: | Physical review letters 2008-04, Vol.100 (15), p.155504-155504, Article 155504 |
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| container_title | Physical review letters |
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| creator | Harb, Maher Ernstorfer, Ralph Hebeisen, Christoph T Sciaini, Germán Peng, Weina Dartigalongue, Thibault Eriksson, Mark A Lagally, Max G Kruglik, Sergei G Miller, R J Dwayne |
| description | The excitation of a high density of carriers in semiconductors can induce an order-to-disorder phase transition due to changes in the potential-energy landscape of the lattice. We report the first direct resolution of the structural details of this phenomenon in freestanding films of polycrystalline and (001)-oriented crystalline Si, using 200-fs electron pulses. At excitation levels greater than approximately 6% of the valence electron density, the crystalline structure of the lattice is lost in |
| doi_str_mv | 10.1103/physrevlett.100.155504 |
| format | Article |
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| source | American Physical Society Journals |
| title | Electronically driven structure changes of Si captured by femtosecond electron diffraction |
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