Oxygen diffusion through the disordered oxide network during silicon oxidation

An atomic-scale description is provided for the long-range oxygen migration through the disordered SiO2 oxide during silicon oxidation. First-principles calculations, classical molecular dynamics, and Monte Carlo simulations are used in sequence to span the relevant length and time scales. The O2 mo...

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Veröffentlicht in:	Physical review letters 2002-03, Vol.88 (12), p.125901-125901, Article 125901
Hauptverfasser:	Bongiorno, Angelo, Pasquarello, Alfredo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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