Local manipulation of nuclear spin in a semiconductor quantum well

Local manipulation of nuclear spin in a semiconductor quantum well

The shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positione...

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Veröffentlicht in:Physical review letters 2003-11, Vol.91 (20), p.207602-207602, Article 207602
Hauptverfasser: Poggio, M, Steeves, G M, Myers, R C, Kato, Y, Gossard, A C, Awschalom, D D
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container_issue 20
container_start_page 207602
container_title Physical review letters
container_volume 91
creator Poggio, M
Steeves, G M
Myers, R C
Kato, Y
Gossard, A C
Awschalom, D D
description The shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positioned along the growth direction of the well. Applying rf voltages across the gates induces resonant spin transitions of selected isotopes. This depolarizing effect depends strongly on the separation of electrons and holes, suggesting that a highly localized mechanism accounts for the observed behavior.
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title Local manipulation of nuclear spin in a semiconductor quantum well
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