Properties of liquid silicon observed by time-resolved x-ray absorption spectroscopy

Time-resolved x-ray spectroscopy at the Si L edges is used to probe the electronic structure of an amorphous Si foil as it melts following absorption of an ultrafast laser pulse. Picosecond temporal resolution allows observation of the transient liquid phase before vaporization and before the liquid...

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Veröffentlicht in:Physical review letters 2003-10, Vol.91 (15), p.157403-157403, Article 157403
Hauptverfasser: Johnson, S L, Heimann, P A, Lindenberg, A M, Jeschke, H O, Garcia, M E, Chang, Z, Lee, R W, Rehr, J J, Falcone, R W
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container_end_page 157403
container_issue 15
container_start_page 157403
container_title Physical review letters
container_volume 91
creator Johnson, S L
Heimann, P A
Lindenberg, A M
Jeschke, H O
Garcia, M E
Chang, Z
Lee, R W
Rehr, J J
Falcone, R W
description Time-resolved x-ray spectroscopy at the Si L edges is used to probe the electronic structure of an amorphous Si foil as it melts following absorption of an ultrafast laser pulse. Picosecond temporal resolution allows observation of the transient liquid phase before vaporization and before the liquid breaks up into droplets. The melting causes changes in the spectrum that match predictions of molecular dynamics and ab initio x-ray absorption codes.
doi_str_mv 10.1103/physrevlett.91.157403
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title Properties of liquid silicon observed by time-resolved x-ray absorption spectroscopy
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