Magneto infrared absorption in high electron density GaAs quantum wells

Magneto infrared absorption in high electron density GaAs quantum wells

Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review letters 2001-01, Vol.86 (2), p.336-339
Hauptverfasser: Poulter, A J, Zeman, J, Maude, D K, Potemski, M, Martinez, G, Riedel, A, Hey, R, Friedland, K J
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 339
container_issue 2
container_start_page 336
container_title Physical review letters
container_volume 86
creator Poulter, A J
Zeman, J
Maude, D K
Potemski, M
Martinez, G
Riedel, A
Hey, R
Friedland, K J
description Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.
doi_str_mv 10.1103/PhysRevLett.86.336
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_70643271</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>70643271</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-392c8c7c20776a9e572e88c93103f8abb6e4f53e70fd832bfb2f138c99f156923</originalsourceid><addsrcrecordid>eNpNkE9LAzEUxIMotla_gAfZk7eteUl3kz2WolWoKKLnkM2-tCv7p02ySr-9kRb09GCYGeb9CLkGOgWg_O51s_dv-LXCEKYyn3Ken5AxUFGkAmB2SsaUckgLSsWIXHj_SSkFlstzMgIAISTLxmT5rNcdhj6pO-u0wyrRpe_dNtR9F7VkU683CTZogotChZ2vwz5Z6rlPdoPuwtAm39g0_pKcWd14vDreCfl4uH9fPKarl-XTYr5KDacQUl4wI40wjAqR6wIzwVBKU_D4j5W6LHOc2YyjoLaSnJW2ZBZ4NBQWsrxgfEJuD71b1-8G9EG1tTdxge6wH7wSNJ9xJiAa2cFoXO-9Q6u2rm612yug6hef-odPyVxFfDF0c2wfyharv8iRF_8BthVueQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>70643271</pqid></control><display><type>article</type><title>Magneto infrared absorption in high electron density GaAs quantum wells</title><source>American Physical Society Journals</source><creator>Poulter, A J ; Zeman, J ; Maude, D K ; Potemski, M ; Martinez, G ; Riedel, A ; Hey, R ; Friedland, K J</creator><creatorcontrib>Poulter, A J ; Zeman, J ; Maude, D K ; Potemski, M ; Martinez, G ; Riedel, A ; Hey, R ; Friedland, K J</creatorcontrib><description>Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.86.336</identifier><identifier>PMID: 11177825</identifier><language>eng</language><publisher>United States</publisher><ispartof>Physical review letters, 2001-01, Vol.86 (2), p.336-339</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-392c8c7c20776a9e572e88c93103f8abb6e4f53e70fd832bfb2f138c99f156923</citedby><cites>FETCH-LOGICAL-c301t-392c8c7c20776a9e572e88c93103f8abb6e4f53e70fd832bfb2f138c99f156923</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/11177825$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Poulter, A J</creatorcontrib><creatorcontrib>Zeman, J</creatorcontrib><creatorcontrib>Maude, D K</creatorcontrib><creatorcontrib>Potemski, M</creatorcontrib><creatorcontrib>Martinez, G</creatorcontrib><creatorcontrib>Riedel, A</creatorcontrib><creatorcontrib>Hey, R</creatorcontrib><creatorcontrib>Friedland, K J</creatorcontrib><title>Magneto infrared absorption in high electron density GaAs quantum wells</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.</description><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNpNkE9LAzEUxIMotla_gAfZk7eteUl3kz2WolWoKKLnkM2-tCv7p02ySr-9kRb09GCYGeb9CLkGOgWg_O51s_dv-LXCEKYyn3Ken5AxUFGkAmB2SsaUckgLSsWIXHj_SSkFlstzMgIAISTLxmT5rNcdhj6pO-u0wyrRpe_dNtR9F7VkU683CTZogotChZ2vwz5Z6rlPdoPuwtAm39g0_pKcWd14vDreCfl4uH9fPKarl-XTYr5KDacQUl4wI40wjAqR6wIzwVBKU_D4j5W6LHOc2YyjoLaSnJW2ZBZ4NBQWsrxgfEJuD71b1-8G9EG1tTdxge6wH7wSNJ9xJiAa2cFoXO-9Q6u2rm612yug6hef-odPyVxFfDF0c2wfyharv8iRF_8BthVueQ</recordid><startdate>20010108</startdate><enddate>20010108</enddate><creator>Poulter, A J</creator><creator>Zeman, J</creator><creator>Maude, D K</creator><creator>Potemski, M</creator><creator>Martinez, G</creator><creator>Riedel, A</creator><creator>Hey, R</creator><creator>Friedland, K J</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20010108</creationdate><title>Magneto infrared absorption in high electron density GaAs quantum wells</title><author>Poulter, A J ; Zeman, J ; Maude, D K ; Potemski, M ; Martinez, G ; Riedel, A ; Hey, R ; Friedland, K J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-392c8c7c20776a9e572e88c93103f8abb6e4f53e70fd832bfb2f138c99f156923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Poulter, A J</creatorcontrib><creatorcontrib>Zeman, J</creatorcontrib><creatorcontrib>Maude, D K</creatorcontrib><creatorcontrib>Potemski, M</creatorcontrib><creatorcontrib>Martinez, G</creatorcontrib><creatorcontrib>Riedel, A</creatorcontrib><creatorcontrib>Hey, R</creatorcontrib><creatorcontrib>Friedland, K J</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Poulter, A J</au><au>Zeman, J</au><au>Maude, D K</au><au>Potemski, M</au><au>Martinez, G</au><au>Riedel, A</au><au>Hey, R</au><au>Friedland, K J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magneto infrared absorption in high electron density GaAs quantum wells</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2001-01-08</date><risdate>2001</risdate><volume>86</volume><issue>2</issue><spage>336</spage><epage>339</epage><pages>336-339</pages><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.</abstract><cop>United States</cop><pmid>11177825</pmid><doi>10.1103/PhysRevLett.86.336</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0031-9007
ispartof Physical review letters, 2001-01, Vol.86 (2), p.336-339
issn 0031-9007
1079-7114
language eng
recordid cdi_proquest_miscellaneous_70643271
source American Physical Society Journals
title Magneto infrared absorption in high electron density GaAs quantum wells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T19%3A27%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Magneto%20infrared%20absorption%20in%20high%20electron%20density%20GaAs%20quantum%20wells&rft.jtitle=Physical%20review%20letters&rft.au=Poulter,%20A%20J&rft.date=2001-01-08&rft.volume=86&rft.issue=2&rft.spage=336&rft.epage=339&rft.pages=336-339&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.86.336&rft_dat=%3Cproquest_cross%3E70643271%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=70643271&rft_id=info:pmid/11177825&rfr_iscdi=true