Remote p-Doping of InAs Nanowires
We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor−liquid−solid (VLS) mechanism. Remote doping of III−V nanowires i...
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| Veröffentlicht in: | Nano letters 2007-05, Vol.7 (5), p.1144-1148 |
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| container_end_page | 1148 |
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| container_issue | 5 |
| container_start_page | 1144 |
| container_title | Nano letters |
| container_volume | 7 |
| creator | Li, H.-Y Wunnicke, O Borgström, M. T Immink, W. G. G van Weert, M. H. M Verheijen, M. A Bakkers, E. P. A. M |
| description | We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor−liquid−solid (VLS) mechanism. Remote doping of III−V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell. |
| doi_str_mv | 10.1021/nl0627487 |
| format | Article |
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T ; Immink, W. G. G ; van Weert, M. H. M ; Verheijen, M. A ; Bakkers, E. P. A. M</creator><creatorcontrib>Li, H.-Y ; Wunnicke, O ; Borgström, M. T ; Immink, W. G. G ; van Weert, M. H. M ; Verheijen, M. A ; Bakkers, E. P. A. M</creatorcontrib><description>We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor−liquid−solid (VLS) mechanism. Remote doping of III−V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl0627487</identifier><identifier>PMID: 17425372</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals ; Exact sciences and technology ; Materials science ; Methods of nanofabrication ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Physics</subject><ispartof>Nano letters, 2007-05, Vol.7 (5), p.1144-1148</ispartof><rights>Copyright © 2007 American Chemical Society</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a343t-ee6201fbdac0263d1e57b7cf1e2c70725ecd378c7dcab5670588b659c3bee16a3</citedby><cites>FETCH-LOGICAL-a343t-ee6201fbdac0263d1e57b7cf1e2c70725ecd378c7dcab5670588b659c3bee16a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl0627487$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl0627487$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2763,27075,27923,27924,56737,56787</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18744511$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/17425372$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, H.-Y</creatorcontrib><creatorcontrib>Wunnicke, O</creatorcontrib><creatorcontrib>Borgström, M. T</creatorcontrib><creatorcontrib>Immink, W. G. G</creatorcontrib><creatorcontrib>van Weert, M. H. M</creatorcontrib><creatorcontrib>Verheijen, M. A</creatorcontrib><creatorcontrib>Bakkers, E. P. A. M</creatorcontrib><title>Remote p-Doping of InAs Nanowires</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor−liquid−solid (VLS) mechanism. Remote doping of III−V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNpt0E1Lw0AQgOFFFFurB_-AxIOCh-jsd3Is9atQFETPYbOZSEqSjbsN4r830tBePM0cHmbgJeScwi0FRu_aGhTTItEHZEolh1ilKTvc7YmYkJMQ1gCQcgnHZEK1YJJrNiWXb9i4DUZdfO-6qv2MXBkt23mIXkzrviuP4ZQclaYOeDbOGfl4fHhfPMer16flYr6KDRd8EyMqBrTMC2OBKV5QlDrXtqTIrAbNJNqC68TqwppcKg0ySXIlU8tzRKoMn5Hr7d3Ou68ewyZrqmCxrk2Lrg-ZBpEIBXSAN1tovQvBY5l1vmqM_8koZH89sl2PwV6MR_u8wWIvxwADuBqBCdbUpTetrcLeJVoISeneGRuytet9O7T45-EvHg5xMA</recordid><startdate>20070501</startdate><enddate>20070501</enddate><creator>Li, H.-Y</creator><creator>Wunnicke, O</creator><creator>Borgström, M. 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T</creatorcontrib><creatorcontrib>Immink, W. G. G</creatorcontrib><creatorcontrib>van Weert, M. H. M</creatorcontrib><creatorcontrib>Verheijen, M. A</creatorcontrib><creatorcontrib>Bakkers, E. P. A. M</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, H.-Y</au><au>Wunnicke, O</au><au>Borgström, M. T</au><au>Immink, W. G. G</au><au>van Weert, M. H. M</au><au>Verheijen, M. A</au><au>Bakkers, E. P. A. M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Remote p-Doping of InAs Nanowires</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2007-05-01</date><risdate>2007</risdate><volume>7</volume><issue>5</issue><spage>1144</spage><epage>1148</epage><pages>1144-1148</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor−liquid−solid (VLS) mechanism. Remote doping of III−V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>17425372</pmid><doi>10.1021/nl0627487</doi><tpages>5</tpages></addata></record> |
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| ispartof | Nano letters, 2007-05, Vol.7 (5), p.1144-1148 |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Materials science Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics |
| title | Remote p-Doping of InAs Nanowires |
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