Characterisation of sol-gel prepared (HfO2)x(SiO2)1-x (x=0.1, 0.2 and 0.4) by 1H, 13C, 17 O and 29Si MAS NMR, FTIR and TGA

The HfO2-SiO2 system is attracting interest as a possible new dielectric material in semiconductor devices. Knowledge of the location of hafnium within the silica network and the effect hafnium has on the structure will be central to the successful use of this material system in this application. He...

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Veröffentlicht in:	Solid state nuclear magnetic resonance 2008-01, Vol.33 (1-2), p.16-24
Hauptverfasser:	O'Dell, Luke A, Gunawidjaja, Philips N, Holland, Mark A, Mountjoy, Gavin, Pickup, Dave M, Newport, Robert J, Smith, Mark E
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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