Control of Surface Migration of Gold Particles on Si Nanowires
On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5−20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditi...
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Veröffentlicht in: | Nano letters 2008-01, Vol.8 (1), p.362-368 |
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creator | Kawashima, Takahiro Mizutani, Tatsunori Nakagawa, Tohru Torii, Hideo Saitoh, Tohru Komori, Kazunori Fujii, Minoru |
description | On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5−20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditions, specifically by dynamically changing the growth parameters during the growth process. We show that insufficient supply of Si source to the Au−Si eutectic on top of the SiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au−Si eutectic, which is precipitated on the surface as Au particles during cooling. We also show that using Au−Si eutectic on the surface of SiNWs as a catalyst enables one-step growth of branched SiNWs. |
doi_str_mv | 10.1021/nl072366g |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_70196082</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>70196082</sourcerecordid><originalsourceid>FETCH-LOGICAL-a409t-76828ea0c13fbeb65a466d8ff82409a22c4b24f0e5b7fddd6c3d98ad11a7291a3</originalsourceid><addsrcrecordid>eNptkF1LwzAUhoMobn5c-AekNwpeVJO0TZMbQYZOYX7A9Lqc5mNkZM1MWsR_b8fKduPVObzn4T3wIHRB8C3BlNw1Dpc0Y2xxgMakyHDKhKCHu53nI3QS4xJjLLICH6MR4VgUZUbG6H7imzZ4l3iTzLtgQOrk1S4CtNY3m3DqnUo-ILRWOh2TPpzb5A0a_2ODjmfoyICL-nyYp-jr6fFz8pzO3qcvk4dZCjkWbVoyTrkGLElmal2zAnLGFDeG0_4OlMq8prnBuqhLo5RiMlOCgyIESioIZKfoetu7Dv6707GtVjZK7Rw02nexKjERDHPagzdbUAYfY9CmWge7gvBbEVxtZFU7WT17OZR29UqrPTnY6YGrAYAowZkAjbRxzwkhcobZngMZq6XvQtO7-OfhH4nafHo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>70196082</pqid></control><display><type>article</type><title>Control of Surface Migration of Gold Particles on Si Nanowires</title><source>American Chemical Society Journals</source><creator>Kawashima, Takahiro ; Mizutani, Tatsunori ; Nakagawa, Tohru ; Torii, Hideo ; Saitoh, Tohru ; Komori, Kazunori ; Fujii, Minoru</creator><creatorcontrib>Kawashima, Takahiro ; Mizutani, Tatsunori ; Nakagawa, Tohru ; Torii, Hideo ; Saitoh, Tohru ; Komori, Kazunori ; Fujii, Minoru</creatorcontrib><description>On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5−20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditions, specifically by dynamically changing the growth parameters during the growth process. We show that insufficient supply of Si source to the Au−Si eutectic on top of the SiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au−Si eutectic, which is precipitated on the surface as Au particles during cooling. We also show that using Au−Si eutectic on the surface of SiNWs as a catalyst enables one-step growth of branched SiNWs.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl072366g</identifier><identifier>PMID: 18095731</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Catalytic methods ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Diffusion in nanoscale solids ; Diffusion in solids ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Methods of nanofabrication ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Physics ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Nano letters, 2008-01, Vol.8 (1), p.362-368</ispartof><rights>Copyright © 2008 American Chemical Society</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a409t-76828ea0c13fbeb65a466d8ff82409a22c4b24f0e5b7fddd6c3d98ad11a7291a3</citedby><cites>FETCH-LOGICAL-a409t-76828ea0c13fbeb65a466d8ff82409a22c4b24f0e5b7fddd6c3d98ad11a7291a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl072366g$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl072366g$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19994606$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18095731$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kawashima, Takahiro</creatorcontrib><creatorcontrib>Mizutani, Tatsunori</creatorcontrib><creatorcontrib>Nakagawa, Tohru</creatorcontrib><creatorcontrib>Torii, Hideo</creatorcontrib><creatorcontrib>Saitoh, Tohru</creatorcontrib><creatorcontrib>Komori, Kazunori</creatorcontrib><creatorcontrib>Fujii, Minoru</creatorcontrib><title>Control of Surface Migration of Gold Particles on Si Nanowires</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5−20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditions, specifically by dynamically changing the growth parameters during the growth process. We show that insufficient supply of Si source to the Au−Si eutectic on top of the SiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au−Si eutectic, which is precipitated on the surface as Au particles during cooling. We also show that using Au−Si eutectic on the surface of SiNWs as a catalyst enables one-step growth of branched SiNWs.</description><subject>Catalytic methods</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diffusion in nanoscale solids</subject><subject>Diffusion in solids</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Methods of nanofabrication</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNptkF1LwzAUhoMobn5c-AekNwpeVJO0TZMbQYZOYX7A9Lqc5mNkZM1MWsR_b8fKduPVObzn4T3wIHRB8C3BlNw1Dpc0Y2xxgMakyHDKhKCHu53nI3QS4xJjLLICH6MR4VgUZUbG6H7imzZ4l3iTzLtgQOrk1S4CtNY3m3DqnUo-ILRWOh2TPpzb5A0a_2ODjmfoyICL-nyYp-jr6fFz8pzO3qcvk4dZCjkWbVoyTrkGLElmal2zAnLGFDeG0_4OlMq8prnBuqhLo5RiMlOCgyIESioIZKfoetu7Dv6707GtVjZK7Rw02nexKjERDHPagzdbUAYfY9CmWge7gvBbEVxtZFU7WT17OZR29UqrPTnY6YGrAYAowZkAjbRxzwkhcobZngMZq6XvQtO7-OfhH4nafHo</recordid><startdate>20080101</startdate><enddate>20080101</enddate><creator>Kawashima, Takahiro</creator><creator>Mizutani, Tatsunori</creator><creator>Nakagawa, Tohru</creator><creator>Torii, Hideo</creator><creator>Saitoh, Tohru</creator><creator>Komori, Kazunori</creator><creator>Fujii, Minoru</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20080101</creationdate><title>Control of Surface Migration of Gold Particles on Si Nanowires</title><author>Kawashima, Takahiro ; Mizutani, Tatsunori ; Nakagawa, Tohru ; Torii, Hideo ; Saitoh, Tohru ; Komori, Kazunori ; Fujii, Minoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a409t-76828ea0c13fbeb65a466d8ff82409a22c4b24f0e5b7fddd6c3d98ad11a7291a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Catalytic methods</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diffusion in nanoscale solids</topic><topic>Diffusion in solids</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Methods of nanofabrication</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kawashima, Takahiro</creatorcontrib><creatorcontrib>Mizutani, Tatsunori</creatorcontrib><creatorcontrib>Nakagawa, Tohru</creatorcontrib><creatorcontrib>Torii, Hideo</creatorcontrib><creatorcontrib>Saitoh, Tohru</creatorcontrib><creatorcontrib>Komori, Kazunori</creatorcontrib><creatorcontrib>Fujii, Minoru</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kawashima, Takahiro</au><au>Mizutani, Tatsunori</au><au>Nakagawa, Tohru</au><au>Torii, Hideo</au><au>Saitoh, Tohru</au><au>Komori, Kazunori</au><au>Fujii, Minoru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Control of Surface Migration of Gold Particles on Si Nanowires</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2008-01-01</date><risdate>2008</risdate><volume>8</volume><issue>1</issue><spage>362</spage><epage>368</epage><pages>362-368</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5−20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditions, specifically by dynamically changing the growth parameters during the growth process. We show that insufficient supply of Si source to the Au−Si eutectic on top of the SiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au−Si eutectic, which is precipitated on the surface as Au particles during cooling. We also show that using Au−Si eutectic on the surface of SiNWs as a catalyst enables one-step growth of branched SiNWs.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>18095731</pmid><doi>10.1021/nl072366g</doi><tpages>7</tpages></addata></record> |
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subjects | Catalytic methods Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion in nanoscale solids Diffusion in solids Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Transport properties of condensed matter (nonelectronic) |
title | Control of Surface Migration of Gold Particles on Si Nanowires |
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