Molecular-Based Synthetic Approach to New Group IV Materials for High-Efficiency, Low-Cost Solar Cells and Si-Based Optoelectronics

Ge1-x-y Si x Sn y alloys have emerged as a new class of highly versatile IR semiconductors offering the potential for independent variation of band structure and lattice dimension, making them the first practical group IV ternary system fully compatible with Si CMOS processing. In this paper we deve...

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Veröffentlicht in:	Journal of the American Chemical Society 2008-11, Vol.130 (47), p.16095-16102
Hauptverfasser:	Fang, Yan-Yan, Xie, Junqi, Tolle, John, Roucka, Radek, D’Costa, Vijay R, Chizmeshya, Andrew V. G, Menendez, Jose, Kouvetakis, John
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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