Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect
Silicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules−silicon junctions...
Gespeichert in:
Veröffentlicht in: | Langmuir 2008-10, Vol.24 (19), p.11300-11306 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 11306 |
---|---|
container_issue | 19 |
container_start_page | 11300 |
container_title | Langmuir |
container_volume | 24 |
creator | Hiremath, R. K Rabinal, M. K Mulimani, B. G Khazi, I. M |
description | Silicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules−silicon junctions were constituted for molecules belonging to ethynylbenzene series using soft mercury contact. These junctions show a systematic change in the electrical charge transport with dipole moment of molecules. Parameters such as ideality factor, barrier height, and density of interface states of various junctions are estimated to understand the role of organic molecules. These studies offer the prospect to develop molecular electronics, which may find potential applications in solar cells and chemical and biological sensors. |
doi_str_mv | 10.1021/la800882e |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_69612646</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>69612646</sourcerecordid><originalsourceid>FETCH-LOGICAL-a381t-dba4749bad1c7e60c564ef6e9ca22066669dd7c2457dd662fbdc8e283612581a3</originalsourceid><addsrcrecordid>eNptkL1u2zAQgImiQeK4GfoCBZcW6KCEpCSS6ha4-WvjtojSJQtxJk-AUlp0SQlI3iBzHjFPUhk2nKW33HAfPhw-Qt5zdsyZ4CceNGNaC3xDJrwULCu1UG_JhKkiz1Qh8wNymNI9Y6zKi2qfHHCttFZlNSF38-DRDh6if6Sz0PUxeI-OzrEH__L0XOOytaFzg-1DpN-GzvZt6BINHa1bvz7ReogNWPxCT-nXdjXq6FnToO3fkb0GfMKj7Z6S3-dnt7PL7PrnxdXs9DqDXPM-cwsoVFEtwHGrUDJbygIbiZUFIZgcp3JOWVGUyjkpRbNwVqPQueSi1BzyKfm08a5i-Dtg6s2yTRa9hw7DkIysRlKOFabk8wa0MaQUsTGr2C4hPhrOzDqk2YUc2Q9b6bBYonslt-VG4OMWgGTBNxE626YdJ5jict1_SrIN16YeH3Z3iH-MVLkqze2v2qh6_uPu5vvM3Lx6wSZzH4bYje3-8-A_jeiXZQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>69612646</pqid></control><display><type>article</type><title>Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect</title><source>ACS Publications</source><creator>Hiremath, R. K ; Rabinal, M. K ; Mulimani, B. G ; Khazi, I. M</creator><creatorcontrib>Hiremath, R. K ; Rabinal, M. K ; Mulimani, B. G ; Khazi, I. M</creatorcontrib><description>Silicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules−silicon junctions were constituted for molecules belonging to ethynylbenzene series using soft mercury contact. These junctions show a systematic change in the electrical charge transport with dipole moment of molecules. Parameters such as ideality factor, barrier height, and density of interface states of various junctions are estimated to understand the role of organic molecules. These studies offer the prospect to develop molecular electronics, which may find potential applications in solar cells and chemical and biological sensors.</description><identifier>ISSN: 0743-7463</identifier><identifier>EISSN: 1520-5827</identifier><identifier>DOI: 10.1021/la800882e</identifier><identifier>PMID: 18788759</identifier><identifier>CODEN: LANGD5</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Chemistry ; Colloidal state and disperse state ; Devices and Applications: Sensors, Fluidics, Patterning, Catalysis, Photonic Crystals ; Exact sciences and technology ; General and physical chemistry ; Surface physical chemistry</subject><ispartof>Langmuir, 2008-10, Vol.24 (19), p.11300-11306</ispartof><rights>Copyright © 2008 American Chemical Society</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a381t-dba4749bad1c7e60c564ef6e9ca22066669dd7c2457dd662fbdc8e283612581a3</citedby><cites>FETCH-LOGICAL-a381t-dba4749bad1c7e60c564ef6e9ca22066669dd7c2457dd662fbdc8e283612581a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/la800882e$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/la800882e$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2751,27055,27903,27904,56716,56766</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20716074$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18788759$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Hiremath, R. K</creatorcontrib><creatorcontrib>Rabinal, M. K</creatorcontrib><creatorcontrib>Mulimani, B. G</creatorcontrib><creatorcontrib>Khazi, I. M</creatorcontrib><title>Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect</title><title>Langmuir</title><addtitle>Langmuir</addtitle><description>Silicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules−silicon junctions were constituted for molecules belonging to ethynylbenzene series using soft mercury contact. These junctions show a systematic change in the electrical charge transport with dipole moment of molecules. Parameters such as ideality factor, barrier height, and density of interface states of various junctions are estimated to understand the role of organic molecules. These studies offer the prospect to develop molecular electronics, which may find potential applications in solar cells and chemical and biological sensors.</description><subject>Chemistry</subject><subject>Colloidal state and disperse state</subject><subject>Devices and Applications: Sensors, Fluidics, Patterning, Catalysis, Photonic Crystals</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Surface physical chemistry</subject><issn>0743-7463</issn><issn>1520-5827</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNptkL1u2zAQgImiQeK4GfoCBZcW6KCEpCSS6ha4-WvjtojSJQtxJk-AUlp0SQlI3iBzHjFPUhk2nKW33HAfPhw-Qt5zdsyZ4CceNGNaC3xDJrwULCu1UG_JhKkiz1Qh8wNymNI9Y6zKi2qfHHCttFZlNSF38-DRDh6if6Sz0PUxeI-OzrEH__L0XOOytaFzg-1DpN-GzvZt6BINHa1bvz7ReogNWPxCT-nXdjXq6FnToO3fkb0GfMKj7Z6S3-dnt7PL7PrnxdXs9DqDXPM-cwsoVFEtwHGrUDJbygIbiZUFIZgcp3JOWVGUyjkpRbNwVqPQueSi1BzyKfm08a5i-Dtg6s2yTRa9hw7DkIysRlKOFabk8wa0MaQUsTGr2C4hPhrOzDqk2YUc2Q9b6bBYonslt-VG4OMWgGTBNxE626YdJ5jict1_SrIN16YeH3Z3iH-MVLkqze2v2qh6_uPu5vvM3Lx6wSZzH4bYje3-8-A_jeiXZQ</recordid><startdate>20081007</startdate><enddate>20081007</enddate><creator>Hiremath, R. K</creator><creator>Rabinal, M. K</creator><creator>Mulimani, B. G</creator><creator>Khazi, I. M</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20081007</creationdate><title>Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect</title><author>Hiremath, R. K ; Rabinal, M. K ; Mulimani, B. G ; Khazi, I. M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a381t-dba4749bad1c7e60c564ef6e9ca22066669dd7c2457dd662fbdc8e283612581a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Chemistry</topic><topic>Colloidal state and disperse state</topic><topic>Devices and Applications: Sensors, Fluidics, Patterning, Catalysis, Photonic Crystals</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Surface physical chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hiremath, R. K</creatorcontrib><creatorcontrib>Rabinal, M. K</creatorcontrib><creatorcontrib>Mulimani, B. G</creatorcontrib><creatorcontrib>Khazi, I. M</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Langmuir</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hiremath, R. K</au><au>Rabinal, M. K</au><au>Mulimani, B. G</au><au>Khazi, I. M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect</atitle><jtitle>Langmuir</jtitle><addtitle>Langmuir</addtitle><date>2008-10-07</date><risdate>2008</risdate><volume>24</volume><issue>19</issue><spage>11300</spage><epage>11306</epage><pages>11300-11306</pages><issn>0743-7463</issn><eissn>1520-5827</eissn><coden>LANGD5</coden><abstract>Silicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules−silicon junctions were constituted for molecules belonging to ethynylbenzene series using soft mercury contact. These junctions show a systematic change in the electrical charge transport with dipole moment of molecules. Parameters such as ideality factor, barrier height, and density of interface states of various junctions are estimated to understand the role of organic molecules. These studies offer the prospect to develop molecular electronics, which may find potential applications in solar cells and chemical and biological sensors.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>18788759</pmid><doi>10.1021/la800882e</doi><tpages>7</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0743-7463 |
ispartof | Langmuir, 2008-10, Vol.24 (19), p.11300-11306 |
issn | 0743-7463 1520-5827 |
language | eng |
recordid | cdi_proquest_miscellaneous_69612646 |
source | ACS Publications |
subjects | Chemistry Colloidal state and disperse state Devices and Applications: Sensors, Fluidics, Patterning, Catalysis, Photonic Crystals Exact sciences and technology General and physical chemistry Surface physical chemistry |
title | Molecularly Controlled Metal−Semiconductor Junctions on Silicon Surface: A Dipole Effect |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T14%3A53%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Molecularly%20Controlled%20Metal%E2%88%92Semiconductor%20Junctions%20on%20Silicon%20Surface:%20A%20Dipole%20Effect&rft.jtitle=Langmuir&rft.au=Hiremath,%20R.%20K&rft.date=2008-10-07&rft.volume=24&rft.issue=19&rft.spage=11300&rft.epage=11306&rft.pages=11300-11306&rft.issn=0743-7463&rft.eissn=1520-5827&rft.coden=LANGD5&rft_id=info:doi/10.1021/la800882e&rft_dat=%3Cproquest_cross%3E69612646%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=69612646&rft_id=info:pmid/18788759&rfr_iscdi=true |