SHG in doped GaSe:In crystals
Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transpare...
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| Veröffentlicht in: | Optics express 2008-06, Vol.16 (13), p.9978-9985 |
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| creator | Feng, Zhi-Shu Kang, Zhi-Hui Wu, Feng-Guang Gao, Jin-Yue Jiang, Yun Zhang, Hong-Zhi Andreev, Yury M Lanskii, Grigory V Atuchin, Viktor V Gavrilova, Tatyana A |
| description | Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective. |
| doi_str_mv | 10.1364/OE.16.009978 |
| format | Article |
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No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.16.009978</identifier><identifier>PMID: 18575568</identifier><language>eng</language><publisher>United States</publisher><subject>Computer Simulation ; Crystallization - methods ; Equipment Design ; Equipment Failure Analysis ; Gallium - chemistry ; Lasers, Solid-State ; Light ; Models, Theoretical ; Refractometry - instrumentation ; Scattering, Radiation ; Selenium - chemistry ; Transducers</subject><ispartof>Optics express, 2008-06, Vol.16 (13), p.9978-9985</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-20c0114a78cc984bc511f8412aa498caa320e2c08465914b7a4329fa20d6c6c63</citedby><cites>FETCH-LOGICAL-c327t-20c0114a78cc984bc511f8412aa498caa320e2c08465914b7a4329fa20d6c6c63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18575568$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Feng, Zhi-Shu</creatorcontrib><creatorcontrib>Kang, Zhi-Hui</creatorcontrib><creatorcontrib>Wu, Feng-Guang</creatorcontrib><creatorcontrib>Gao, Jin-Yue</creatorcontrib><creatorcontrib>Jiang, Yun</creatorcontrib><creatorcontrib>Zhang, Hong-Zhi</creatorcontrib><creatorcontrib>Andreev, Yury M</creatorcontrib><creatorcontrib>Lanskii, Grigory V</creatorcontrib><creatorcontrib>Atuchin, Viktor V</creatorcontrib><creatorcontrib>Gavrilova, Tatyana A</creatorcontrib><title>SHG in doped GaSe:In crystals</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective.</description><subject>Computer Simulation</subject><subject>Crystallization - methods</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Gallium - chemistry</subject><subject>Lasers, Solid-State</subject><subject>Light</subject><subject>Models, Theoretical</subject><subject>Refractometry - instrumentation</subject><subject>Scattering, Radiation</subject><subject>Selenium - chemistry</subject><subject>Transducers</subject><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpNkE1Lw0AYhBdRbK3evCo5eTL1fTf76U1KbAuFHKrnZbPZQKRtYjY59N8bSUCZw8zhYWCGkHuEJSaCvWTpEsUSQGupLsgcQbOYgZKX__KM3ITwBYBManlNZqi45FyoOXnYb9ZRdYqKuvFFtLZ7_7o9Ra49h84ewi25Kgfzd5MvyOd7-rHaxLtsvV297WKXUNnFFBwgMiuVc1qx3HHEUjGk1jKtnLUJBU8dKCa4RpZLyxKqS0uhEG5QsiBPY2_T1t-9D505VsH5w8GefN0HIzRlSnA6gM8j6No6hNaXpmmro23PBsH83mGy1KAw4x0D_jj19vnRF3_wtD_5AQ6eVvU</recordid><startdate>20080623</startdate><enddate>20080623</enddate><creator>Feng, Zhi-Shu</creator><creator>Kang, Zhi-Hui</creator><creator>Wu, Feng-Guang</creator><creator>Gao, Jin-Yue</creator><creator>Jiang, Yun</creator><creator>Zhang, Hong-Zhi</creator><creator>Andreev, Yury M</creator><creator>Lanskii, Grigory V</creator><creator>Atuchin, Viktor V</creator><creator>Gavrilova, Tatyana A</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20080623</creationdate><title>SHG in doped GaSe:In crystals</title><author>Feng, Zhi-Shu ; Kang, Zhi-Hui ; Wu, Feng-Guang ; Gao, Jin-Yue ; Jiang, Yun ; Zhang, Hong-Zhi ; Andreev, Yury M ; Lanskii, Grigory V ; Atuchin, Viktor V ; Gavrilova, Tatyana A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-20c0114a78cc984bc511f8412aa498caa320e2c08465914b7a4329fa20d6c6c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Computer Simulation</topic><topic>Crystallization - methods</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Gallium - chemistry</topic><topic>Lasers, Solid-State</topic><topic>Light</topic><topic>Models, Theoretical</topic><topic>Refractometry - instrumentation</topic><topic>Scattering, Radiation</topic><topic>Selenium - chemistry</topic><topic>Transducers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng, Zhi-Shu</creatorcontrib><creatorcontrib>Kang, Zhi-Hui</creatorcontrib><creatorcontrib>Wu, Feng-Guang</creatorcontrib><creatorcontrib>Gao, Jin-Yue</creatorcontrib><creatorcontrib>Jiang, Yun</creatorcontrib><creatorcontrib>Zhang, Hong-Zhi</creatorcontrib><creatorcontrib>Andreev, Yury M</creatorcontrib><creatorcontrib>Lanskii, Grigory V</creatorcontrib><creatorcontrib>Atuchin, Viktor V</creatorcontrib><creatorcontrib>Gavrilova, Tatyana A</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feng, Zhi-Shu</au><au>Kang, Zhi-Hui</au><au>Wu, Feng-Guang</au><au>Gao, Jin-Yue</au><au>Jiang, Yun</au><au>Zhang, Hong-Zhi</au><au>Andreev, Yury M</au><au>Lanskii, Grigory V</au><au>Atuchin, Viktor V</au><au>Gavrilova, Tatyana A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SHG in doped GaSe:In crystals</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2008-06-23</date><risdate>2008</risdate><volume>16</volume><issue>13</issue><spage>9978</spage><epage>9985</epage><pages>9978-9985</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective.</abstract><cop>United States</cop><pmid>18575568</pmid><doi>10.1364/OE.16.009978</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Computer Simulation Crystallization - methods Equipment Design Equipment Failure Analysis Gallium - chemistry Lasers, Solid-State Light Models, Theoretical Refractometry - instrumentation Scattering, Radiation Selenium - chemistry Transducers |
| title | SHG in doped GaSe:In crystals |
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