Stress Dependence of Paramagnetic Point Defects in Amorphous Silicon Oxide

Room-temperature red cathodoluminescence (CL) emission (R band) arising from the paramagnetic point-defect population present in amorphous silicon oxide (SiO x ) has been characterized with respect to its shift upon applied stress, according to a piezo-spectroscopic (PS) approach. The R band (found...

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Veröffentlicht in:	The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory Molecules, spectroscopy, kinetics, environment, & general theory, 2008-05, Vol.112 (17), p.3927-3934
Hauptverfasser:	Leto, Andrea, Munisso, M. Chiara, Porporati, A. Alan, Zhu, Wenliang, Pezzotti, Giuseppe
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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