Influence of doping rate in Er3+:ZnO films on emission characteristics
High-quality Er(3+):ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2 wt. % Er doping. Two peaks were observed at approximately 1.54 microm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks we...
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| Veröffentlicht in: | Optics letters 2008-04, Vol.33 (8), p.815-817 |
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| container_title | Optics letters |
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| creator | DOUGLAS, L MUNDLE, R KONDA, R BONNER, C. E PRADHAN, A. K SAHU, D. R HUANG, J.-L |
| description | High-quality Er(3+):ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2 wt. % Er doping. Two peaks were observed at approximately 1.54 microm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er(3+) ions in the form of ErO(6) clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications. |
| doi_str_mv | 10.1364/OL.33.000815 |
| format | Article |
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E ; PRADHAN, A. K ; SAHU, D. R ; HUANG, J.-L</creator><creatorcontrib>DOUGLAS, L ; MUNDLE, R ; KONDA, R ; BONNER, C. E ; PRADHAN, A. K ; SAHU, D. R ; HUANG, J.-L</creatorcontrib><description>High-quality Er(3+):ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2 wt. % Er doping. Two peaks were observed at approximately 1.54 microm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er(3+) ions in the form of ErO(6) clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.33.000815</identifier><identifier>PMID: 18414542</identifier><identifier>CODEN: OPLEDP</identifier><language>eng</language><publisher>Washington, DC: Optical Society of America</publisher><subject>Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Optical materials ; Optics ; Other nonlinear optical materials; photorefractive and semiconductor materials ; Physics</subject><ispartof>Optics letters, 2008-04, Vol.33 (8), p.815-817</ispartof><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20324859$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18414542$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>DOUGLAS, L</creatorcontrib><creatorcontrib>MUNDLE, R</creatorcontrib><creatorcontrib>KONDA, R</creatorcontrib><creatorcontrib>BONNER, C. 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These results are very important for designing waveguides for telecommunications.</description><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Other nonlinear optical materials; photorefractive and semiconductor materials</subject><subject>Physics</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNo9zzFPwzAQBWALgWgpbMwoCywoxc7ZTsyGqhYqVeoCC0t0OBcwSpxgJwP_nkgUprvh09N7jF0KvhSg5d1-twRYcs4LoY7YXCgwqcyNPGZzLqROjTLZjJ3F-DkZnQOcspkopJBKZnO22fq6GclbSro6qbre-fck4ECJ88k6wO39q98ntWvamHQ-odbF6KbHfmBAO1BwcXA2nrOTGptIF4e7YC-b9fPqKd3tH7erh13aC22GNJMFSF2goSLLai2gsqhFhiAqWSthFHJQOteIoACI50BEgqPlREWNEhbs5je3D93XSHEop0KWmgY9dWMstREcpm0TvDrA8a2lquyDazF8l3_LJ3B9ABgtNnVAb138dxmHqawy8AMCSWVf</recordid><startdate>20080415</startdate><enddate>20080415</enddate><creator>DOUGLAS, L</creator><creator>MUNDLE, R</creator><creator>KONDA, R</creator><creator>BONNER, C. 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The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er(3+) ions in the form of ErO(6) clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.</abstract><cop>Washington, DC</cop><pub>Optical Society of America</pub><pmid>18414542</pmid><doi>10.1364/OL.33.000815</doi><tpages>3</tpages></addata></record> |
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| source | Optica Publishing Group Journals |
| subjects | Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical materials Optics Other nonlinear optical materials photorefractive and semiconductor materials Physics |
| title | Influence of doping rate in Er3+:ZnO films on emission characteristics |
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