Effect of strain on the carrier mobility in heavily doped p-type Si

We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2 x 10{20} cm{-3}...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physical review letters 2006-09, Vol.97 (13), p.136605-136605, Article 136605
Hauptverfasser:	Romano, Lucia, Piro, Alberto Maria, Grimaldi, Maria Grazia, Bisognin, Gabriele, Napolitani, Enrico, De Salvador, Davide
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!