Nanoscale Rapid Melting and Crystallization of Semiconductor Thin Films

Nanoscale Rapid Melting and Crystallization of Semiconductor Thin Films

The current study details nanosecond laser-based rapid melting and crystallization of thin amorphous silicon (a-Si) films at the nanoscale using two different optical near-field processing schemes. Both apertureless and tapered fiber near-field scanning optical microscope probes were utilized to del...

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Veröffentlicht in:Nano letters 2005-10, Vol.5 (10), p.1924-1930
Hauptverfasser: Chimmalgi, Anant, Hwang, David J, Grigoropoulos, Costas P
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Structure of solids and liquids
crystallography
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container_end_page 1930
container_issue 10
container_start_page 1924
container_title Nano letters
container_volume 5
creator Chimmalgi, Anant
Hwang, David J
Grigoropoulos, Costas P
description The current study details nanosecond laser-based rapid melting and crystallization of thin amorphous silicon (a-Si) films at the nanoscale using two different optical near-field processing schemes. Both apertureless and tapered fiber near-field scanning optical microscope probes were utilized to deliver highly confined irradiation on the target surface. The various modification regimes produced as a result of the rapid a-Si melting and crystallization transformations were shown to critically depend on the applied laser fluence. Consequently, the crystallized pattern morphology and feature size could be finely controlled. High energy density was observed to impart ablation surrounded by a narrow melt ring. At much lower incident laser energy density, single nanostructures with a lateral dimension of ∼90 nm were defined.
doi_str_mv 10.1021/nl051244q
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Both apertureless and tapered fiber near-field scanning optical microscope probes were utilized to deliver highly confined irradiation on the target surface. The various modification regimes produced as a result of the rapid a-Si melting and crystallization transformations were shown to critically depend on the applied laser fluence. Consequently, the crystallized pattern morphology and feature size could be finely controlled. High energy density was observed to impart ablation surrounded by a narrow melt ring. At much lower incident laser energy density, single nanostructures with a lateral dimension of ∼90 nm were defined.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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subjects Applied sciences
Condensed matter: structure, mechanical and thermal properties
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Structure of solids and liquids
crystallography
title Nanoscale Rapid Melting and Crystallization of Semiconductor Thin Films
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