Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency

Despite the high density of threading dislocations generally found in (AlGaIn)N heterostructures, the light emission efficiency of such structures is exceptionally high. It has become common to attribute the high efficiency to compositional fluctuations or even phase separation in the active GaInN q...

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Veröffentlicht in:Physical review letters 2005-09, Vol.95 (12), p.127402.1-127402.4, Article 127402
Hauptverfasser: HANGLEITER, A, HITZEL, F, NETZEL, C, FUHRMANN, D, ROSSOW, U, ADE, G, HINZE, P
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Sprache:eng
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