Nyquist noise of cell adhesion detected in a neuron-silicon transistor
Interfacing of nerve cells and field-effect transistors is determined by current flow along the electrical resistance of the cell-chip junction. We study the thermal noise of the junction by measuring the fluctuations of extracellular voltage with a low-noise transistor. We find a spectral power den...
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| Veröffentlicht in: | Physical review letters 2006-06, Vol.96 (22), p.228102-228102, Article 228102 |
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| container_end_page | 228102 |
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| container_issue | 22 |
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| container_title | Physical review letters |
| container_volume | 96 |
| creator | Voelker, Moritz Fromherz, Peter |
| description | Interfacing of nerve cells and field-effect transistors is determined by current flow along the electrical resistance of the cell-chip junction. We study the thermal noise of the junction by measuring the fluctuations of extracellular voltage with a low-noise transistor. We find a spectral power density of 5 x 10(-14) V2/Hz and interpret it as Nyquist noise of the cell-chip junction with a resistance of 3 MOhm. The thermal noise allows us to elucidate the properties of cell adhesion and it sets a thermodynamical limit for the signal-to-noise ratio of neuroelectronic interfacing. |
| doi_str_mv | 10.1103/PhysRevLett.96.228102 |
| format | Article |
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| ispartof | Physical review letters, 2006-06, Vol.96 (22), p.228102-228102, Article 228102 |
| issn | 0031-9007 1079-7114 |
| language | eng |
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| source | MEDLINE; American Physical Society Journals |
| subjects | Animals Brain - cytology Cell Adhesion - physiology Membrane Potentials - physiology Neurons - cytology Neurons - physiology Oxidation-Reduction Rats Silicon Transistors, Electronic |
| title | Nyquist noise of cell adhesion detected in a neuron-silicon transistor |
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