High-Performance Logic Circuits Constructed on Single CdS Nanowires

A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal−semiconductor field-effect transistors (MESFETs) made on a single CdS nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one−d...

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Veröffentlicht in:	Nano letters 2007-11, Vol.7 (11), p.3300-3304
Hauptverfasser:	Ma, Ren-Min, Dai, Lun, Huo, Hai-Bin, Xu, Wan-Jin, Qin, G. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Molecular electronics, nanoelectronics Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal−semiconductor field-effect transistors (MESFETs) made on a single CdS nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one−dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio (∼107), low threshold voltage (∼−0.4 V), and low subthreshold swing (∼60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl0715286