Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique

A novel method for the determination of Al, Ca, Cr, Cu, Fe, Mg, Mn, Ni and Ti in high purity silicon carbide (SiC) using slurry introduction axial viewed inductively coupled plasma optical emission spectrometry (ICP-OES) was described. The various sizes of SiC slurry were dispersed by adding dispers...

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Veröffentlicht in:	Analytica chimica acta 2006-09, Vol.577 (2), p.288-294
Hauptverfasser:	Wang, Zheng, Qiu, Deren, Ni, Zheming, Tao, Guangyi, Yang, Pengyuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical chemistry Chemistry Exact sciences and technology Inductively coupled plasma optical emission spectrometry Polyethylene imine Silicon carbide Slurry introduction Spectrometric and optical methods
Online-Zugang:	Volltext
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