Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors

Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence ln(mu) proportional, variant1/T(2) for the mobility mu. We demonstrate that in space-charge limited diodes the hole mobility (micro(h)) of a large variety of organic semiconductors...

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Veröffentlicht in:Physical review letters 2008-02, Vol.100 (5), p.056601-056601, Article 056601
Hauptverfasser: Craciun, N I, Wildeman, J, Blom, P W M
Format: Artikel
Sprache:eng
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