Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing...

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Veröffentlicht in:Physical review letters 2008-02, Vol.100 (4), p.047401-047401, Article 047401
Hauptverfasser: Bajoni, Daniele, Senellart, Pascale, Wertz, Esther, Sagnes, Isabelle, Miard, Audrey, Lemaître, Aristide, Bloch, Jacqueline
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container_title Physical review letters
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creator Bajoni, Daniele
Senellart, Pascale
Wertz, Esther
Sagnes, Isabelle
Miard, Audrey
Lemaître, Aristide
Bloch, Jacqueline
description Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.
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title Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
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