Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates
Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor−liquid−solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements...
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Veröffentlicht in: | Journal of the American Chemical Society 2005-06, Vol.127 (21), p.7920-7923 |
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Sprache: | eng |
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