Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates

Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor−liquid−solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements...

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Veröffentlicht in:Journal of the American Chemical Society 2005-06, Vol.127 (21), p.7920-7923
Hauptverfasser: Wang, Xudong, Song, Jinhui, Li, Peng, Ryou, Jae Hyun, Dupuis, Russell D, Summers, Christopher J, Wang, Zhong L
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Sprache:eng
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