Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening...
Gespeichert in:
| Veröffentlicht in: | Physical review letters 2005-04, Vol.94 (13), p.136401.1-136401.4, Article 136401 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 136401.4 |
|---|---|
| container_issue | 13 |
| container_start_page | 136401.1 |
| container_title | Physical review letters |
| container_volume | 94 |
| creator | DAS SARMA, S LILLY, M. P HWANG, E. H PFEIFFER, L. N WEST, K. W RENO, J. L |
| description | By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of approximately 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system. |
| doi_str_mv | 10.1103/physrevlett.94.136401 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67855915</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67855915</sourcerecordid><originalsourceid>FETCH-LOGICAL-c403t-638d581c9256e219ed09904980885c4064a316edec52bfac44800132a749f7fb3</originalsourceid><addsrcrecordid>eNpNkF1LwzAUQIMobk5_gtIXfeu8aZK2eZThFwwUmc8lS29dJG1nkk32781YYT4F7jn5OoRcU5hSCux-vdp5h1uLIUwln1KWc6AnZEyhkGlBKT8lYwBGUwlQjMiF998AQLO8PCcjKiTwOB8Ts_jt09q02HnTd8omLQZlU9P5jVWhd0lwKqIQYaJ8opI1Ot1HtB_8YybiZGW-VmnbL401YZegRR1cZH7nA7aX5KxR1uPVsE7I59PjYvaSzt-eX2cP81RzYCHNWVmLkmqZiRwzKrEGGR8rSyhLEZWcK0ZzrFGLbNkozXkZv8UyVXDZFM2STcjd4dy163826EPVGq_RWtVhv_FVXpRCSCqiKA6idr2PLZtq7Uyr3K6iUO0bV--x8Qdu57FxJXl1aBz33QwXbJYt1sddQ9Qo3A6C8lrZJlbSxh-9vMgYZ8D-ANQcibc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67855915</pqid></control><display><type>article</type><title>Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system</title><source>American Physical Society Journals</source><creator>DAS SARMA, S ; LILLY, M. P ; HWANG, E. H ; PFEIFFER, L. N ; WEST, K. W ; RENO, J. L</creator><creatorcontrib>DAS SARMA, S ; LILLY, M. P ; HWANG, E. H ; PFEIFFER, L. N ; WEST, K. W ; RENO, J. L</creatorcontrib><description>By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of approximately 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/physrevlett.94.136401</identifier><identifier>PMID: 15904007</identifier><identifier>CODEN: PRLTAO</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in multilayers, nanoscale materials and structures ; Exact sciences and technology ; Physics</subject><ispartof>Physical review letters, 2005-04, Vol.94 (13), p.136401.1-136401.4, Article 136401</ispartof><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-638d581c9256e219ed09904980885c4064a316edec52bfac44800132a749f7fb3</citedby><cites>FETCH-LOGICAL-c403t-638d581c9256e219ed09904980885c4064a316edec52bfac44800132a749f7fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16723430$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/15904007$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>DAS SARMA, S</creatorcontrib><creatorcontrib>LILLY, M. P</creatorcontrib><creatorcontrib>HWANG, E. H</creatorcontrib><creatorcontrib>PFEIFFER, L. N</creatorcontrib><creatorcontrib>WEST, K. W</creatorcontrib><creatorcontrib>RENO, J. L</creatorcontrib><title>Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of approximately 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in multilayers, nanoscale materials and structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpNkF1LwzAUQIMobk5_gtIXfeu8aZK2eZThFwwUmc8lS29dJG1nkk32781YYT4F7jn5OoRcU5hSCux-vdp5h1uLIUwln1KWc6AnZEyhkGlBKT8lYwBGUwlQjMiF998AQLO8PCcjKiTwOB8Ts_jt09q02HnTd8omLQZlU9P5jVWhd0lwKqIQYaJ8opI1Ot1HtB_8YybiZGW-VmnbL401YZegRR1cZH7nA7aX5KxR1uPVsE7I59PjYvaSzt-eX2cP81RzYCHNWVmLkmqZiRwzKrEGGR8rSyhLEZWcK0ZzrFGLbNkozXkZv8UyVXDZFM2STcjd4dy163826EPVGq_RWtVhv_FVXpRCSCqiKA6idr2PLZtq7Uyr3K6iUO0bV--x8Qdu57FxJXl1aBz33QwXbJYt1sddQ9Qo3A6C8lrZJlbSxh-9vMgYZ8D-ANQcibc</recordid><startdate>20050408</startdate><enddate>20050408</enddate><creator>DAS SARMA, S</creator><creator>LILLY, M. P</creator><creator>HWANG, E. H</creator><creator>PFEIFFER, L. N</creator><creator>WEST, K. W</creator><creator>RENO, J. L</creator><general>American Physical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20050408</creationdate><title>Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system</title><author>DAS SARMA, S ; LILLY, M. P ; HWANG, E. H ; PFEIFFER, L. N ; WEST, K. W ; RENO, J. L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-638d581c9256e219ed09904980885c4064a316edec52bfac44800132a749f7fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in multilayers, nanoscale materials and structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DAS SARMA, S</creatorcontrib><creatorcontrib>LILLY, M. P</creatorcontrib><creatorcontrib>HWANG, E. H</creatorcontrib><creatorcontrib>PFEIFFER, L. N</creatorcontrib><creatorcontrib>WEST, K. W</creatorcontrib><creatorcontrib>RENO, J. L</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DAS SARMA, S</au><au>LILLY, M. P</au><au>HWANG, E. H</au><au>PFEIFFER, L. N</au><au>WEST, K. W</au><au>RENO, J. L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2005-04-08</date><risdate>2005</risdate><volume>94</volume><issue>13</issue><spage>136401.1</spage><epage>136401.4</epage><pages>136401.1-136401.4</pages><artnum>136401</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><coden>PRLTAO</coden><abstract>By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of approximately 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><pmid>15904007</pmid><doi>10.1103/physrevlett.94.136401</doi><tpages>1</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0031-9007 |
| ispartof | Physical review letters, 2005-04, Vol.94 (13), p.136401.1-136401.4, Article 136401 |
| issn | 0031-9007 1079-7114 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_67855915 |
| source | American Physical Society Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Physics |
| title | Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T18%3A44%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Two-dimensional%20metal-insulator%20transition%20as%20a%20percolation%20transition%20in%20a%20high-mobility%20electron%20system&rft.jtitle=Physical%20review%20letters&rft.au=DAS%20SARMA,%20S&rft.date=2005-04-08&rft.volume=94&rft.issue=13&rft.spage=136401.1&rft.epage=136401.4&rft.pages=136401.1-136401.4&rft.artnum=136401&rft.issn=0031-9007&rft.eissn=1079-7114&rft.coden=PRLTAO&rft_id=info:doi/10.1103/physrevlett.94.136401&rft_dat=%3Cproquest_cross%3E67855915%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67855915&rft_id=info:pmid/15904007&rfr_iscdi=true |